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SIC466ED-T1-GE3
Module DC-DC 1-OUT 0.8V to 15V 10A 27-Pin PowerPAK MLP EP T/R
SIC466ED-T1-GE3
Module DC-DC 1-OUT 0.8V to 15V 10A 27-Pin PowerPAK MLP EP T/R
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SIC466ED-T1-GE3 數據表
目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
Operating with unwavering reliability across diverse temperature conditions, the SIC466ED-T1-GE3 is engineered to withstand extreme voltage and current levels, making it a dependable choice for demanding industrial and automotive environments. Its robust construction and cutting-edge technology guarantee superior performance and longevity, meeting the stringent requirements of modern power applications
主要特徵
- Simplified
- Space-saving
- Smart design
- Efficient power
- Fully adjustable
- User-friendly interface
應用
- High power MOSFET for solar inverters
- Reliable silicon carbide technology
- Efficient motor drive solution
規格
以下是所選零件的基本參數，涉及零件的特性及其所屬類別。
| Product Category ! | Switching Voltage Regulators | RoHS | Details |
| Output Voltage | 800 mV to 55.2 V | Output Current ! | 10 A |
| Input Voltage, Max | 60 V | Number of Outputs | 1 Output |
| Topology | Buck | Package / Case | MLP55-27 |
| Mounting Style | SMD/SMT | Switching Frequency ! | 100 kHz to 2 MHz |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature ! | + 125 C |
| Series | SIC466 | Input Voltage, Min | 4.5 V |
| Brand | Vishay Semiconductors | Operating Supply Current | 200 uA |
| Product Type ! | Switching Voltage Regulators | Shutdown | Shutdown |
| Factory Pack Quantity | 3000 | Subcategory | PMIC - Power Management ICs |
| Tradename | microBUCK | Type | DC/DC Converter |
| Unit Weight | 0.028894 oz |
Specification Comparison
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is SIC466ED-T1-GE3?
The SIC466ED-T1-GE3 is a silicon carbide power MOSFET designed by Vishay Siliconix. It is intended for high-power applications requiring efficient power switching, such as power supplies, motor control, and electric vehicle systems.
How Does SIC466ED-T1-GE3 Work?
The SIC466ED-T1-GE3 operates as a power MOSFET, where it controls the flow of current between the source and drain terminals by enabling or disabling the channel using the gate signal. Its silicon carbide construction provides high efficiency, fast switching speeds, and high-temperature performance compared to traditional silicon-based MOSFETs.
How Many Pins does SIC466ED-T1-GE3 have and What are the Functions of the Pinout Configuration?
The SIC466ED-T1-GE3 is typically available in a TO-252-4L (DPAK) package. The pinout configuration includes:
- GATE: Gate control terminal for switching the MOSFET.
- SOURCE: Source terminal for the input or output connection.
- DRAIN: Drain terminal for the output or input connection.
- SUBSTRATE: Substrate connection for thermal dissipation.
What are the Pros and Cons of SIC466ED-T1-GE3?
Pros:
- High Power Handling: Capable of handling high power levels efficiently.
- Fast Switching Speeds: Offers rapid turn-on and turn-off times for improved performance.
- High-Temperature Performance: Silicon carbide construction enables operation at elevated temperatures.
- Reliability: Provides reliable operation in demanding environments.
- Compact Package: The TO-252-4L package offers a space-efficient design.
Cons:
- Cost: Silicon carbide MOSFETs may be more expensive than traditional silicon MOSFETs.
- Drive Voltage Requirements: May require higher gate drive voltages compared to silicon devices.
- Complexity: Requires careful consideration of thermal management due to high-temperature operation.
Are There Any Equivalents/Alternatives to SIC466ED-T1-GE3 for Recommendation?
- Alternatives to the SIC466ED-T1-GE3 include the C3M0075120J from Wolfspeed and the SCT2080KE from Rohm Semiconductor.
- Equivalents to the SIC466ED-T1-GE3 include the CCS050M12CM2 from Cree and the LSIC1MO120E0080 from Littelfuse.
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