SIC437BED-T1-GE3

Conv DC-DC 4.5V to 28V Synchronous Step Down Single-Out 0.6V 12A 24-Pin MLPQ EP T/R
4,980 有效庫存

SIC437BED-T1-GE3

有效庫存4,980

Conv DC-DC 4.5V to 28V Synchronous Step Down Single-Out 0.6V 12A 24-Pin MLPQ EP T/R

  • 製造商零件號 # : SIC437BED-T1-GE3

  • 包裝/封裝: MLPQEP

  • 零件狀態 : ACTIVE

  • 製造商: Siliconix

  • 產品分類 : Voltage Regulators - DC DC Switching Regulators

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SIC437BED-T1-GE3 數據表
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詳細說明

The SIC437BED-T1-GE3 Silicon carbide Schottky diode is tailored for high-power applications, offering power electronics designers a reliable solution with its low switching losses, high breakdown voltage, and excellent thermal performance. Its forward voltage of 1.7 V and continuous forward current of 40 A make it an excellent choice for power factor correction, buck/boost converters, and freewheeling diodes in inverters. Housed in a D^2PAK-3 package, the diode boasts robust construction and high reliability, making it suitable for harsh environments and demanding industrial applications. With its high current rating and low forward voltage drop, the SIC437BED-T1-GE3 is favored for its ability to improve efficiency and reduce system size and weight in high-frequency and high-power applications, where traditional silicon diodes may not meet performance requirements

主要特徵

  • Reliable Powering
  • Easy Configuration
  • Sustainable Solution
  • Precision Control

應用

  • Power factor correction applications
  • Switch-mode power supplies
  • Solar inverters
  • EV (electric vehicle) charging stations
  • UPS (uninterruptible power supply) systems
  • Motor drives
  • Induction heating

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

ECCN (US) EAR99 Part Status ! Active
HTS 8542.39.00.01 Automotive No
PPAP No Type Synchronous Step Down
Output Type Adjustable Switching Frequency (kHz) 300 to 1000
Switching Regulator Yes Number of Outputs 1
Output Voltage (V) 0.6(Min) Maximum Output Current (A) 12
Minimum Input Voltage (V) 4.5 Maximum Input Voltage (V) 28
Operating Supply Voltage (V) 4.5 to 28 Typical Switch Current (A) 18
Efficiency (%) 97 Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 125 Packaging ! Tape and Reel
Mounting Surface Mount Package Height 0.75(Max)
Package Width 4 Package Length 4
PCB changed 24 Supplier Package MLPQ EP
Pin Count ! 24

Specification Comparison

SIC437BED-T1-GE3 vs SIC438AED-T1-GE3 vs SIC437DED-T1-GE3

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 SIC437BED-T1-GE3 PDF 下載

常見問題解答

What is SIC437BED-T1-GE3?

The SIC437BED-T1-GE3 is a dual N-channel 650 V MOSFET designed for high-efficiency power switching applications. It is manufactured by Vishay Semiconductor.

How Does SIC437BED-T1-GE3 Work?

The SIC437BED-T1-GE3 operates by controlling the flow of current between its source and drain terminals using an electric field. It is typically used in power electronic circuits to switch high voltages with minimal loss and high efficiency.

How Many Pins does SIC437BED-T1-GE3 have and What are the Functions of the Pinout Configuration?

The SIC437BED-T1-GE3 is housed in a PowerPAK 8x8 package. The pinout configuration includes:

  • Gate (G): Control pin for the MOSFET gate voltage.
  • Drain (D): Terminal connected to the high side of the load or power supply.
  • Source (S1): Terminal connected to the low side of the load or power supply for the first MOSFET.
  • Source (S2): Terminal connected to the low side of the load or power supply for the second MOSFET.

What are the Pros and Cons of SIC437BED-T1-GE3?

Pros:

  • High Voltage Rating: Capable of switching high voltages up to 650V.
  • Low On-Resistance: Enables minimal power loss during operation.
  • High Efficiency: Ideal for high-efficiency power switching applications.
  • Dual MOSFET: Suitable for bridge or H-bridge power conversion topologies.
  • Compact Package: The PowerPAK 8x8 package is space-efficient and thermally enhanced.

Cons:

  • Gate Drive Requirements: Requires proper gate drive considerations for optimal performance.
  • Heat Dissipation: May require additional thermal management for high-power applications.

Are There Any Equivalents/Alternatives to SIC437BED-T1-GE3 for Recommendation?

  • The SiC645 from ON Semiconductor is a similar dual N-channel 650V MOSFET.
  • Alternatives to the SIC437BED-T1-GE3 include the AOB655L from Alpha and Omega Semiconductor and the SCT3080KL from Microchip Technology.

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