SI1869DH-T1-GE3

有效庫存3,470

Power Load Distribution Switch, High Side, Active High/Active Low, 20 V, 1.2 A, 0.132 ohm, SC-70-6

  • 製造商零件號 # : SI1869DH-T1-GE3

  • 包裝/封裝: SC

  • 零件狀態 : Active

  • 製造商: VISHAY

  • 產品分類 : Power Distribution Switches, Load Drivers

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SI1869DH-T1-GE3 數據表

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詳細說明

Designed for high-efficiency power management applications, the SI1869DH-T1-GE3 is a dual N-channel MOSFET that offers a combination of low on-resistance and a high current rating. Manufactured by Vishay Siliconix, this MOSFET is particularly suitable for use in DC-DC converters and synchronous rectification, where it significantly reduces power losses and improves overall system efficiency. Packaged in a compact and thermally efficient PowerPAK® SO-8 package, the "T1" designation indicates its space-efficient design, while the "GE3" suffix highlights its lead (Pb)-free and RoHS-compliant construction. With its dual-channel configuration, the SI1869DH-T1-GE3 enables synchronous rectification and is widely chosen for power management applications that require reliable performance and thermal efficiency

主要特徵

  • SI18-GE3 integrates high-efficiency power conversion and motor control
  • Low RDS(on) MOSFET ensures efficient energy transfer and low losses
  • Suitable for voltage conversion, motor control and other power applications

規格

以下是所選零件的基本參數,涉及零件的特性及其所屬類別。

Category Integrated Circuits (ICs)Power Management (PMIC)Power Distribution Switches, Load Drivers Mfr Vishay Siliconix
Series - Package Tape & Reel (TR)Cut Tape (CT)®
Product Status Active Switch Type ! General Purpose
Number of Outputs 1 Ratio - Input:Output 1:1
Output Configuration High Side Output Type P-Channel
Interface On/Off Voltage - Load 1.8V ~ 20V
Voltage - Supply (Vcc/Vdd) - Current - Output (Max) 1.2A
Rds On (Typ) 132mOhm Input Type -
Features Slew Rate Controlled Fault Protection ! -
Operating Temperature ! -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package SC-70-6 Package / Case 6-TSSOP, SC-88, SOT-363
Base Product Number SI1869

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。

初步規格 SI1869DH-T1-GE3 PDF 下載

常見問題解答

What is SI1869DH-T1-GE3?

The SI1869DH-T1-GE3 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Vishay Siliconix. It is specifically designed for use in power management applications, such as voltage regulation, battery charging, and power conversion.

How Does SI1869DH-T1-GE3 Work?

The SI1869DH-T1-GE3 operates as a switch to control the flow of current in electronic circuits. As an N-channel MOSFET, it allows current to flow between the source and drain terminals when a sufficient voltage is applied to the gate terminal. It is commonly used to regulate power flow and control electronic devices.

How Many Pins does SI1869DH-T1-GE3 have and What are the Functions of the Pinout Configuration?

The SI1869DH-T1-GE3 is housed in a PowerPAK SO-8 package. The pinout configuration includes:

  • Gate (G): Controls the conductivity of the MOSFET.
  • Source (S): Connection for the current flow.
  • Drain (D): Terminal where the current exits.
  • Body (B): Usually connected to the source for enhancement mode MOSFETs.

What are the Pros and Cons of SI1869DH-T1-GE3?

Pros:

  • High Efficiency: Offers low RDS(on) for reduced power dissipation.
  • Fast Switching Speed: Enables rapid response in power management applications.
  • High Power Handling: Capable of handling moderate to high power levels.
  • Compact Package: PowerPAK SO-8 package is space-efficient and thermally efficient.

Cons:

  • Gate Voltage Limit: Requires appropriate gate-source voltage for proper operation.
  • Heat Dissipation: May require additional heat sinking for high-power applications.

Are There Any Equivalents/Alternatives to SI1869DH-T1-GE3 for Recommendation?

  • The Si4842DY-T1-GE3 from Vishay Siliconix is an alternative dual N-channel MOSFET with similar characteristics.
  • Equivalents to the SI1869DH-T1-GE3 include the FDS8884 from Fairchild Semiconductor and the NDP6020P from ON Semiconductor.

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