S29GL128N11TFI010
Flash, 8MX16, 110ns, PDSO56, LEAD FREE, MO-142EC, TSOP-56S29GL128N11TFI010
Flash, 8MX16, 110ns, PDSO56, LEAD FREE, MO-142EC, TSOP-56
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S29GL128N11TFI010 數據表
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詳細說明
512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process TechnologyGeneral Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128N is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The devices have a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.Distinctive Characteristics Architectural Advantages ■ Single power supply operation — 3 volt read, erase, and program operations ■ Enhanced VersatileI/O™ control — All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC ■ Manufactured on 110 nm MirrorBit process technology ■ Secured Silicon Sector region — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence — May be programmed and locked at the factory or by the customer ■ Flexible sector architecture — S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors — S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors — S29GL128N: One hundred twenty-eight 64 Kword (128 Kbyte) sectors ■ Compatibility with JEDEC standards — Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection ■ 100,000 erase cycles per sector typical ■ 20-year data retention typicalPerformance Characteristics ■ High performance — 90 ns access time (S29GL128N, S29GL256N) — 100 ns (S29GL512N) — 8-word/16-byte page read buffer — 25 ns page read times — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates ■ Low power consumption (typical values at 3.0 V, 5 MHz) — 25 mA typical active read current; — 50 mA typical erase/program current — 1 µA typical standby mode current ■ Package options — 56-pin TSOP — 64-ball Fortified BGASoftware & Hardware Features ■ Software features — Program Suspend and Resume: read other sectors before programming operation is completed — Erase Suspend and Resume: read/program other sectors before an erase operation is completed — Data# polling and toggle bits provide status — Unlock Bypass Program command reduces overall multiple-word programming time — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices ■ Hardware features — Advanced Sector Protection — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings — Hardware reset input (RESET#) resets device — Ready/Busy# output (RY/BY#) detects program or erase cycle completion
主要特徵
- Software features
- — Program Suspend and Resume: read other sectors before programming operation is completed
- — Erase Suspend and Resume: read/program other sectors before an erase operation is completed
- — Data# polling and toggle bits provide status
- — Unlock Bypass Program command reduces overall multiple-word programming time
- — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
- Hardware features
- — Advanced Sector Protection
- — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings
- — Hardware reset input (RESET#) resets device
- — Ready/Busy# output (RY/BY#) detects program or erase cycle completion
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Part Package Code | TSOP1 |
Pin Count ! | 56 | Reach Compliance Code | |
ECCN Code | 3A991.B.1.A | HTS Code ! | 8542.32.00.51 |
Access Time-Max | 110 ns | Alternate Memory Width | 8 |
Command User Interface | YES | Common Flash Interface | YES |
Data Polling | YES | JESD-30 Code | R-PDSO-G56 |
JESD-609 Code | e3 | Length | 18.4 mm |
Memory Density | 134217728 bit | Memory IC Type | FLASH |
Memory Width | 16 | Moisture Sensitivity Level | 3 |
Number of Functions | 1 | Number of Sectors/Size | 128 |
Number of Terminals | 56 | Number of Words | 8388608 words |
Number of Words Code | 8000000 | Operating Mode ! | ASYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | -40 °C |
Organization | 8MX16 | Package Body Material | PLASTIC/EPOXY |
Package Code | TSSOP | Package Equivalence Code | TSSOP56,.8,20 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
Page Size | 8/16 words | Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Cel) | 260 | Power Supplies ! | 3/3.3 V |
Programming Voltage ! | 3 V | Qualification Status ! | Not Qualified |
Ready/Busy | YES | Seated Height-Max | 1.2 mm |
Sector Size | 128K | Standby Current-Max | 0.000005 A |
Supply Current-Max | 0.09 mA | Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 2.7 V | Supply Voltage-Nom (Vsup) | 3 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | INDUSTRIAL | Terminal Finish | MATTE TIN |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.5 mm |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 40 |
Toggle Bit | YES | Type | NOR TYPE |
Width | 14 mm |
Specification Comparison
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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