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PMGD780SN,115
PMGD780SN,115 MOSFET N-CH TRENCH DL 60V
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製造商零件號 # : PMGD780SN,115
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包裝/封裝: TSSOP-6
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零件狀態 : NRND
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製造商: Nexperia Usa Inc.
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產品分類 : FET, MOSFET Arrays
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PMGD780SN,115 數據表
價格 (USD)
| 數量 | 單價 | 總價 |
|---|---|---|
| 5 | $0.161 | $0.80 |
| 50 | $0.131 | $6.55 |
| 150 | $0.118 | $17.70 |
| 500 | $0.101 | $50.50 |
| 3000 | $0.073 | $219.00 |
| 6000 | $0.068 | $408.00 |
這些價格會受到市場波動的影響，需要提交報價才能取得最新價格。
詳細說明
The PMGD780SN,115 is a MOSFET transistor designed for use in electronic circuits. It is a 2N-Channel transistor with a maximum voltage rating of 60V and a continuous drain current of 0.49A. The transistor is housed in a 6TSSOP (Thin Shrink Small Outline Package) package, which is a small and compact form factor suitable for modern electronic devices with limited space. MOSFET transistors are widely used in electronic circuits for switching and amplification purposes due to their high efficiency and fast switching speeds. The PMGD780SN,115 is specifically designed for low to medium power applications where space is a concern. Its compact package size makes it ideal for mobile devices, portable electronics, and other compact electronic devices where size and weight are critical design factors. With a maximum voltage rating of 60V, the PMGD780SN,115 can handle a wide range of low to medium voltage applications, making it versatile for use in a variety of electronic circuits. Its low continuous drain current rating of 0.49A is suitable for applications that require low power consumption.
主要特徵
- Input voltage range of 100 V AC to 508 V AC
- Operating frequency of 40 kHz
- Output voltage of 380 V
- Maximum output current of 780 mA
- Efficiency of 95%
- Compact design with dimensions of 91 mm x 38 mm x 24 mm
應用
- Automotive electronics
- Industrial control systems
- Power management systems
- LED lighting systems
- Smart home devices
- Medical devices
- Communication equipment
- Robotics
規格
以下是所選零件的基本參數，涉及零件的特性及其所屬類別。
| Product Category ! | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | TSSOP-6 | Transistor Polarity | N-Channel |
| Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 490 mA | Rds On - Drain-Source Resistance | 780 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 1.05 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 410 mW |
| Channel Mode | Enhancement | Brand | Nexperia |
| Product Type ! | MOSFET | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Part # Aliases | 934057709115 |
| Unit Weight | 0.000265 oz |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is PMGD780SN,115?
The PMGD780SN,115 is a dual N-channel Trench MOSFET designed by Nexperia. It is specifically optimized for use in load switch and battery protection applications in portable devices, power management, and battery-powered systems.
How Does PMGD780SN,115 Work?
The PMGD780SN,115 operates as a dual N-channel Trench MOSFET, providing efficient and low-resistance switching for load control and battery protection. It offers low threshold voltage and high current capability, making it suitable for power management applications in portable devices and battery-powered systems.
How Many Pins does PMGD780SN,115 have and What are the Functions of the Pinout Configuration?
The PMGD780SN,115 is housed in a 6-pin SOT457 (SC-74) package. The pinout configuration includes:
- 1/G, 4/G: Gate pins for the two N-channel MOSFETs.
- 2/S, 5/S: Source pins for the two N-channel MOSFETs.
- 3/D, 6/D: Drain pins for the two N-channel MOSFETs.
What are the Pros and Cons of PMGD780SN,115?
Pros:
- Dual MOSFET: Provides two N-channel MOSFETs in a single package, allowing flexibility in circuit design.
- Low Threshold Voltage: Enables efficient low-voltage operation for power management applications.
- Space-Efficient Package: The SOT457 package is compact and suitable for space-constrained designs.
Cons:
- External Components: May require additional external components for optimal performance in certain load switch applications.
- Heat Dissipation: Depending on the application, heat dissipation considerations may be needed due to power dissipation.
Are There Any Equivalents/Alternatives to PMGD780SN,115 for Recommendation?
- The DMN2041LW from Diodes Incorporated is a similar dual N-channel MOSFET for load switch applications.
- Alternatives to the PMGD780SN,115 include the SI2301DS from Vishay and the IPP230N15N3G from Infineon Technologies.
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