MX25L6405DMI-12G

Name: MX25L6405DMI-12G
Rating: 4.5 (10 reviews)

Flash, 32MX2, PDSO16, 0.300 INCH, ROHS COMPLIANT, MS-013, SOP-16

6,292 有效庫存

MX25L6405DMI-12G

有效庫存6,292

Flash, 32MX2, PDSO16, 0.300 INCH, ROHS COMPLIANT, MS-013, SOP-16

製造商零件號 # : MX25L6405DMI-12G
包裝/封裝: SOP-16
製造商: MACRONIX
產品分類 : Microcontrollers

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例子

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管或託盤

MX25L6405DMI-12G 數據表

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詳細說明

GENERAL DESCRIPTION The MX25L1605D are 16,777,216 bit serial Flash memory, which is configured as 2,097,152 x 8 internally. When it is in two I/O read mode, the structure becomes 8,388,608 bits x 2. The MX25L3205D are 33,554,432 bit serial Flash memory, which is configured as 4,194,304 x 8 internally. When it is in two I/O read mode, the structure becomes 16,772,216 bits x 2. The MX25L6405D are 67,108,864 bit serial Flash memory, which is configured as 8,388,608 x 8 internally. When it is in two I/O read mode, the structure becomes 33,554,432 bits x 2. (please refer to the "Two I/O Read mode" section). The MX25L1605D/3205D/6405D feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input.FEATURES GENERAL • Serial Peripheral Interface compatible -- Mode 0 and Mode 3 • 16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure 32M:33,554,432 x 1 bit structure or 16,772,216 x 2 bits (two I/O read mode) structure 64M:67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O read mode) structure • 512 Equal Sectors with 4K byte each (16Mb) 1024 Equal Sectors with 4K byte each (32Mb) 2048 Equal Sectors with 4K byte each (64Mb) - Any Sector can be erased individually • 32 Equal Blocks with 64K byte each (16Mb) 64 Equal Blocks with 64K byte each (32Mb) 128 Equal Blocks with 64K byte each (64Mb) - Any Block can be erased individually • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Latch-up protected to 100mA from -1V to Vcc +1V • Low Vcc write inhibit is from 1.5V to 2.5VPERFORMANCE • High Performance - Fast access time: 86MHz serial clock (15pF + 1TTL Load) and 66MHz serial clock (30pF + 1TTL Load) - Serial clock of two I/O read mode : 50MHz (15pF + TTL Load), which is equivalent to 100MHz - Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page) - Byte program time: 9us (typical) - Continuously program mode (automatically increase address under word program mode) - Fast erase time: 60ms(typ.) /sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip for 16Mb, 25s(typ.) for 32Mb, and 50s(typ.) for 64Mb • Low Power Consumption - Low active read current: 25mA(max.) at 86MHz, 20mA(max.) at 66MHz and 10mA(max.) at 33MHz - Low active programming current: 20mA (max.) - Low active erase current: 20mA (max.) - Low standby current: 20uA (max.) - Deep power-down mode 1uA (typical) • Typical 100,000 erase/program cycles

主要特徵

GENERAL
Serial Peripheral Interface compatible -- Mode 0 and Mode 3
16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure
32M:33,554,432 x 1 bit structure or 16,772,216 x 2 bits (two I/O read mode) structure
64M:67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O read mode) structure
512 Equal Sectors with 4K byte each (16Mb)
1024 Equal Sectors with 4K byte each (32Mb)
2048 Equal Sectors with 4K byte each (64Mb)
- Any Sector can be erased individually
32 Equal Blocks with 64K byte each (16Mb)
64 Equal Blocks with 64K byte each (32Mb)
128 Equal Blocks with 64K byte each (64Mb)
- Any Block can be erased individually
Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
Latch-up protected to 100mA from -1V to Vcc +1V
Low Vcc write inhibit is from 1.5V to 2.5V
PERFORMANCE
High Performance
- Fast access time: 86MHz serial clock (15pF + 1TTL Load) and 66MHz serial clock (30pF + 1TTL Load)
- Serial clock of two I/O read mode : 50MHz (15pF + TTL Load), which is equivalent to 100MHz
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
- Byte program time: 9us (typical)
- Continuously program mode (automatically increase address under word program mode)
- Fast erase time: 60ms(typ.) /sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip for 16Mb, 25s(typ.) for 32Mb, and 50s(typ.) for 64Mb
Low Power Consumption
- Low active read current: 25mA(max.) at 86MHz, 20mA(max.) at 66MHz and 10mA(max.) at 33MHz
- Low active programming current: 20mA (max.)
- Low active erase current: 20mA (max.)
- Low standby current: 20uA (max.)
- Deep power-down mode 1uA (typical)
Typical 100,000 erase/program cycles

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Rohs Code	Yes	Part Life Cycle Code	Obsolete
Part Package Code	SOIC	Pin Count !	16
Reach Compliance Code		ECCN Code	EAR99
HTS Code !	8542.32.00.51	Alternate Memory Width	1
Clock Frequency-Max (fCLK)	86 MHz	Endurance	100000 Write/Erase Cycles
JESD-30 Code	R-PDSO-G16	Length	10.3 mm
Memory Density	67108864 bit	Memory IC Type	FLASH
Memory Width	2	Number of Functions	1
Number of Terminals	16	Number of Words	33554432 words
Number of Words Code	32000000	Operating Mode !	SYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	32MX2	Package Body Material	PLASTIC/EPOXY
Package Code	SOP	Package Equivalence Code	SOP16,.4
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE
Parallel/Serial	SERIAL	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Power Supplies !	3/3.3 V	Programming Voltage !	2.7 V
Qualification Status !	Not Qualified	Seated Height-Max	2.65 mm
Serial Bus Type	SPI	Standby Current-Max	0.00002 A
Supply Current-Max	0.025 mA	Supply Voltage-Max (Vsup)	3.6 V
Supply Voltage-Min (Vsup)	2.7 V	Supply Voltage-Nom (Vsup)	3 V
Surface Mount !	YES	Technology	CMOS
Temperature Grade !	INDUSTRIAL	Terminal Form !	GULL WING
Terminal Pitch !	1.27 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Type	NOR TYPE
Width	7.52 mm	Write Protection	HARDWARE/SOFTWARE