MT46V32M16P-6T

有效庫存4,241

7ns access time

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All Parts Extended Quality Guarantee

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MT46V32M16P-6T 數據表

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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!

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詳細說明

- With its cutting-edge 32M x 16 memory cell configuration, the MT46V32M16P-6T sets a new standard for DDR SDRAM chips, offering unparalleled performance and efficiency. Its 512MB capacity ensures that you have more than enough space to store your data and run multiple applications simultaneously without any lag. Whether you're a gamer, content creator, or business professional, this chip is guaranteed to enhance your user experience and take your device's performance to the next level

MT46V32M16P-6T

主要特徵

  • This component meets the standards of RoHS directive.
  • It has a long lifespan due to its durable design.
  • This module is suitable for industrial control systems.

應用

  • Top choice for printers
  • Key component in telecommunications
  • Quality product for set-top boxes
Micron Technology Inc Inventory

規格

以下是所選零件的基本參數,涉及零件的特性及其所屬類別。

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Obsolete Part Package Code TSOP
Pin Count ! 66 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code ! 8542.32.00.28
Date Of Intro 1999-02-01 Access Mode ! FOUR BANK PAGE BURST
Access Time-Max 0.7 ns Additional Feature ! AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 167 MHz I/O Type COMMON
Interleaved Burst Length 2,4,8 JESD-30 Code R-PDSO-G66
JESD-609 Code e3 Length 22.22 mm
Memory Density 536870912 bit Memory IC Type DDR1 DRAM
Memory Width 16 Number of Functions 1
Number of Ports ! 1 Number of Terminals 66
Number of Words 33554432 words Number of Words Code 32000000
Operating Mode ! SYNCHRONOUS Operating Temperature-Max 70 °C
Operating Temperature-Min Organization 32MX16
Output Characteristics 3-STATE Package Body Material PLASTIC/EPOXY
Package Code TSSOP Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel) 260 Power Supplies ! 2.5 V
Qualification Status ! Not Qualified Refresh Cycles 8192
Seated Height-Max 1.2 mm Self Refresh YES
Sequential Burst Length 2,4,8 Standby Current-Max 0.005 A
Supply Voltage-Max (Vsup) 2.7 V Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V Surface Mount ! YES
Technology CMOS Temperature Grade ! COMMERCIAL
Terminal Finish MATTE TIN Terminal Form ! GULL WING
Terminal Pitch ! 0.65 mm Terminal Position DUAL
Width 10.16 mm

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。

初步規格 MT46V32M16P-6T PDF 下載

常見問題解答

What is MT46V32M16P-6T?

The MT46V32M16P-6T is a 512Mb Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM) designed by Micron Technology. It is suitable for high-performance computing, networking, and telecommunications applications that require high-speed and high-bandwidth memory capabilities.

How Does MT46V32M16P-6T Work?

The MT46V32M16P-6T works by providing high-speed data storage and retrieval capabilities for digital systems. It utilizes double data rate (DDR) architecture, synchronizing data transfers with the system clock to achieve high-speed operation. The memory device features a synchronous interface, allowing for precise data input and output timing.

How Many Pins does MT46V32M16P-6T have and What are the Functions of the Pinout Configuration?

The MT46V32M16P-6T is housed in a 60-ball FBGA (Fine-pitch Ball Grid Array) package. The pinout configuration includes:

  • DQ: Data input/output pins.
  • BA, A: Address pins for bank selection and row/column addressing.
  • CLK, /CKE, /CS, /WE, /RAS, /CAS: Control and clock pins for memory operation.
  • DM: Data mask pins for write data control.
  • VDD, VDDQ, VSS: Power and ground pins for the memory device.

What are the Pros and Cons of MT46V32M16P-6T?

Pros:

  • High Bandwidth: Provides high-speed data transfer capabilities for demanding applications.
  • Synchronous Interface: Offers precise timing control for reliable data transfers.
  • High Density: 512Mb capacity allows for large memory storage in a compact form factor.
  • Low Power Consumption: Operates with low power, suitable for power-sensitive systems.
  • RoHS Compliant: Meets environmental standards for lead-free manufacturing.

Cons:

  • Complex Interface: Requires careful consideration of timing and control for proper operation.
  • Thermal Considerations: May require thermal management in high-speed or high-density applications.
  • Cost: Higher capacity and high-speed memory devices may have a higher cost compared to lower-speed alternatives.

Are There Any Equivalents/Alternatives to MT46V32M16P-6T for Recommendation?

  • The MT47H64M16HR-25E from Micron Technology is a similar DDR SDRAM with higher speed and performance.
  • Alternatives to the MT46V32M16P-6T include the K4B1G1646G from Samsung and the IS42S16320G from Integrated Silicon Solution, Inc. (ISSI).

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