MT46V32M16BN-6
DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60MT46V32M16BN-6
DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60
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MT46V32M16BN-6 數據表
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詳細說明
Functional DescriptionThe DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR SDRAM effectively consists of a single 2n-bit-wide, one-clockcycle data transfer at the internal DRAM core and two corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins.Features• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V• VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)• Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two – one per byte)• Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle• Differential clock inputs (CK and CK#)• Commands entered on each positive CK edge• DQS edge-aligned with data for READs; centeraligned with data for WRITEs• DLL to align DQ and DQS transitions with CK• Four internal banks for concurrent operation• Data mask (DM) for masking write data (x16 has two – one per byte)• Programmable burst lengths: 2, 4, or 8• Auto refresh – 64ms, 8192-cycle(Commercial and industrial) – 16ms, 8192-cycle (Automotive)• Self refresh (not available on AT devices)• Longer-lead TSOP for improved reliability (OCPL)• 2.5V I/O (SSTL_2 compatible)• Concurrent auto precharge option is supported• tRAS lockout supported (tRAP = tRCD)
主要特徵
- VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
- VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)
- Bidirectional data strobe (DQS) transmitted/
- received with data, i.e., source-synchronous data
- capture (x16 has two – one per byte)
- Internal, pipelined double-data-rate (DDR)
- architecture; two data accesses per clock cycle
- Differential clock inputs (CK and CK#)
- Commands entered on each positive CK edge
- DQS edge-aligned with data for READs; centeraligned with data for WRITEs
- DLL to align DQ and DQS transitions with CK
- Four internal banks for concurrent operation
- Data mask (DM) for masking write data
- (x16 has two – one per byte)
- Programmable burst lengths: 2, 4, or 8
- Auto refresh
- – 64ms, 8192-cycle(Commercial and industrial)
- – 16ms, 8192-cycle (Automotive)
- Self refresh (not available on AT devices)
- Longer-lead TSOP for improved reliability (OCPL)
- 2.5V I/O (SSTL_2 compatible)
- Concurrent auto precharge option is supported
- tRAS lockout supported (tRAP = tRCD)
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Part Package Code | BGA |
Pin Count ! | 60 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.28 |
Access Mode ! | FOUR BANK PAGE BURST | Access Time-Max | 0.7 ns |
Additional Feature ! | AUTO/SELF REFRESH | Clock Frequency-Max (fCLK) | 167 MHz |
I/O Type | COMMON | Interleaved Burst Length | 2,4,8 |
JESD-30 Code | R-PBGA-B60 | JESD-609 Code | e1 |
Length | 12.5 mm | Memory Density | 536870912 bit |
Memory IC Type | DDR1 DRAM | Memory Width | 16 |
Number of Functions | 1 | Number of Ports ! | 1 |
Number of Terminals | 60 | Number of Words | 33554432 words |
Number of Words Code | 32000000 | Operating Mode ! | SYNCHRONOUS |
Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
Organization | 32MX16 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | TBGA |
Package Equivalence Code | BGA60,9X12,40/32 | Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, THIN PROFILE | Peak Reflow Temperature (Cel) | 260 |
Power Supplies ! | 2.5 V | Qualification Status ! | Not Qualified |
Refresh Cycles | 8192 | Seated Height-Max | 1.2 mm |
Self Refresh | YES | Sequential Burst Length | 2,4,8 |
Standby Current-Max | 0.005 A | Supply Voltage-Max (Vsup) | 2.7 V |
Supply Voltage-Min (Vsup) | 2.3 V | Supply Voltage-Nom (Vsup) | 2.5 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | COMMERCIAL | Terminal Finish | TIN SILVER COPPER |
Terminal Form ! | BALL | Terminal Pitch ! | 1 mm |
Terminal Position | BOTTOM | Width | 10 mm |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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