MT41K512M8RH-125:E

Name: MT41K512M8RH-125:E
Rating: 4.5 (10 reviews)

Low-voltage DRAM Chip with DDR3L SDRAM technology, 4Gbit capacity, and 512Mx8 configuration

4,254 有效庫存

MT41K512M8RH-125:E

有效庫存4,254

Low-voltage DRAM Chip with DDR3L SDRAM technology, 4Gbit capacity, and 512Mx8 configuration

製造商零件號 # : MT41K512M8RH-125:E
包裝/封裝: FBGA-78
製造商: Micron Technology
產品分類 : Memory

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關於包裝

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例子

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MT41K512M8RH-125:E 數據表

價格 (USD)

數量	單價	總價
1	$7.115	$7.12
10	$6.238	$62.38
30	$5.705	$171.15
100	$5.257	$525.70

這些價格會受到市場波動的影響，需要提交報價才能取得最新價格。

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詳細說明

The MT41K512M8RH-125:E is a cutting-edge DDR3 SDRAM chip designed for high-speed and low-power operation. With a capacity of 512Mx8 and a blazingly fast speed of 125MHz, this chip is the perfect choice for demanding applications such as networking, automotive, and industrial systems. Its reliable performance and efficient memory storage capabilities make it an essential component for any advanced technology project

主要特徵

Extensive Diagnostic Capabilities
Advanced Thermal Design
Compact Size
Ducted Cooling
Quiet Operation

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category !	DRAM	Mounting Style	SMD/SMT
Package / Case	FBGA-78	Series	MT41K
Brand	Micron	Product Type !	DRAM
Subcategory	Memory & Data Storage

Specification Comparison

MT41K512M8RH-125:E vs MT41K512M16HA-125 IT:A vs MT41K512M16HA-125IT:A

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 MT41K512M8RH-125:E PDF 下載

常見問題解答

What is MT41K512M8RH-125:E?

The MT41K512M8RH-125:E is a 4Gb DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) organized as 512M words of 8 bits. It is designed by Micron Technology and is commonly used in various computing and embedded applications such as PCs, servers, and networking equipment.

How Does MT41K512M8RH-125:E Work?

The MT41K512M8RH-125:E works by providing high-speed data storage and retrieval in electronic systems. Its DDR3 interface allows data to be transferred on both the rising and falling edges of the clock signal, effectively doubling the data throughput compared to single data rate SDRAM. This high-speed operation makes it suitable for applications requiring fast and efficient memory access.

How Many Pins does MT41K512M8RH-125:E have and What are the Functions of the Pinout Configuration?

The MT41K512M8RH-125:E is housed in a 96-ball FBGA (Fine-pitch Ball Grid Array) package. The pinout configuration includes:

DQ: Data input/output pins.
BA, A: Address pins for bank selection and addressing memory locations.
CLK, /CKE, /CS, /CAS, /RAS: Control and clock pins for memory access.
DM, DQS, DQS#, DM, /ODT: Data strobe and mask signals for data alignment and output control.
VDD, VSS: Power and ground pins.

What are the Pros and Cons of MT41K512M8RH-125:E?

Pros:

High Speed: Provides fast data transfer rates, enhancing system performance.
High Density: Offers large memory capacity in a compact package, suitable for memory-intensive applications.
Energy Efficiency: Operates with low power consumption, contributing to overall system energy efficiency.
Standardized Interface: Follows industry-standard DDR3 interface for compatibility with a wide range of systems and platforms.

Cons:

Complexity: Requires proper PCB layout and signal integrity considerations for optimal performance.
Cost: DDR3 SDRAMs may have higher cost compared to older generation memory types.
Obsolescence: DDR3 technology may become phased out in favor of newer memory standards in the future.

Are There Any Equivalents/Alternatives to MT41K512M8RH-125:E for Recommendation?

The MT41K512M16HA-125:E from Micron Technology is a similar DDR3 SDRAM with a different organization and pinout. Alternatives to the MT41K512M8RH-125:E include the K4B4G1646E-BYK0 from Samsung and the H5TQ4G63AFR from SK Hynix.