MT40A256M16GE-075E:B

Name: MT40A256M16GE-075E:B
Rating: 4.5 (10 reviews)

MT40A256M16GE-075E:B DDR4 4G 256MX16 FBGA DRAM

6,191 有效庫存

MT40A256M16GE-075E:B

有效庫存6,191

MT40A256M16GE-075E:B DDR4 4G 256MX16 FBGA DRAM

製造商零件號 # : MT40A256M16GE-075E:B
包裝/封裝: FBGA-96
零件狀態 : OBSOLETE
製造商: Micron Technology
產品分類 : Memory

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關於包裝

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MT40A256M16GE-075E:B 數據表

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詳細說明

The MT40A256M16GE-075E:B stands out as a high-quality memory solution for applications that demand swift data processing and minimal latency. Its stellar memory performance makes it an ideal choice for professionals in fields such as graphic design, video editing, and scientific research, where quick access to large datasets is crucial. Experience enhanced productivity and efficiency with this top-of-the-line module from Micron Technology

主要特徵

Very low profile surface mount package (1.1mm)
Integral heat sink-locking tabs
Compatible with automatic insertion equipment
Full metallic bottom eliminates flux entrapment
Voltage range 5 volts to 170 volts
Available in both unidirectional or bi-directional (C suffix for bi-directional)
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
1500 Watt peak pulse power (10 / 1000 µsec.)
Forward Surge Current: 200 Amps at 8.3 ms (excluding bidirectional)
Repetition surge rate (duty factor): 0.01%
Thermal resistance: 2.5°C / watt junction to tab 130°C / watt junction to ambient with recommended footprint
Lead and mounting temperature: 260°C for 10 sec

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category !	DRAM	RoHS	Details
Type	SDRAM - DDR4	Mounting Style	SMD/SMT
Package / Case	FBGA-96	Data Bus Width	16 bit
Organization	256 M x 16	Memory Size !	4 Gbit
Maximum Clock Frequency	1.333 GHz	Supply Voltage - Max	1.26 V
Supply Voltage - Min	1.14 V	Supply Current - Max	100 mA
Minimum Operating Temperature	0 C	Maximum Operating Temperature !	+ 95 C
Series	MT40A	Brand	Micron
Moisture Sensitive	Yes	Product Type !	DRAM
Factory Pack Quantity	1020	Subcategory	Memory & Data Storage
Unit Weight	0.152198 oz

Specification Comparison

MT40A2G8FSE-093E:A TR vs MT40A256M16GE-062E:B vs MT40A256M16GE-075E:B MT40A256M16LY-062E AUT:F vs MT40A256M16GE-062E:B vs MT40A256M16GE-075E:B

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 MT40A256M16GE-075E:B PDF 下載

常見問題解答

What is MT40A256M16GE-075E:B?

The MT40A256M16GE-075E:B is a 4Gb (gigabit) DDR4 SDRAM (Synchronous Dynamic Random Access Memory) module designed by Micron Technology. It is part of the MT40A series and is ideal for use in high-performance computing systems, data centers, and networking equipment.

How Does MT40A256M16GE-075E:B Work?

The MT40A256M16GE-075E:B works by providing high-speed data storage and retrieval for computing systems. It utilizes DDR4 technology, which allows for high-speed data transfer rates and low power consumption. The module is organized as 256 Meg x 16 with a burst length of 8 and operates with a voltage of 1.2V, offering high performance with energy efficiency.

How Many Pins does MT40A256M16GE-075E:B have and What are the Functions of the Pinout Configuration?

The MT40A256M16GE-075E:B is a 96-ball FBGA (Fine-pitch Ball Grid Array) package. The pinout configuration includes:

Data Pins: Multiple data pins for bi-directional data transfer.
Address Pins: Pins for selecting the memory address for read or write operations.
Control Pins: Pins for controlling the memory operations such as chip enable, clock, and data strobe.
Power and Ground Pins: Pins for supplying power and ground connections to the module.

What are the Pros and Cons of MT40A256M16GE-075E:B?

Pros:

High Performance: Offers high-speed data transfer rates, making it suitable for high-performance computing applications.
Energy Efficiency: Operates at a low voltage of 1.2V, contributing to energy savings in overall system power consumption.
Density: With a capacity of 4Gb, it provides high memory density for memory-intensive applications.
Compact Form Factor: The FBGA package offers a compact and space-efficient design suitable for modern system layouts.

Cons:

Cost: Higher density and high-performance memory modules may come at a higher cost.
Compatibility: Requires compatibility with specific system architectures and memory controllers.
Complex Interface: DDR4 modules may require careful consideration of signal integrity and memory controller settings for optimal performance.

Are There Any Equivalents/Alternatives to MT40A256M16GE-075E:B for Recommendation?

Similar alternatives to the MT40A256M16GE-075E:B include the Samsung DDR4 SDRAM modules and the Hynix DDR4 SDRAM modules, which offer comparable performance and specifications.
Equivalents to the MT40A256M16GE-075E:B within Micron's product line include other DDR4 SDRAM modules with similar capacities and specifications.