MT40A1G8WE-083E:B

Name: MT40A1G8WE-083E:B
Rating: 4.5 (10 reviews)

High-density memory component

6,491 有效庫存

MT40A1G8WE-083E:B

有效庫存6,491

High-density memory component

製造商零件號 # : MT40A1G8WE-083E:B
包裝/封裝: FBGA
製造商: Micron Technology
產品分類 : Memory

品質保證

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關於運送

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服務與包裝

About After Sales Service

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關於包裝

在包裝方面，我們的產品均精心包裝在防靜電袋中，以提供ESD防靜電保護。外包裝堅固耐用且閉合牢固。我們支持各種包裝方法，例如捲帶式、切帶式、管式或託盤式。

例子

捲帶式

剪膠帶

管或託盤

MT40A1G8WE-083E:B 數據表

目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!

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詳細說明

These 1500 watt transient voltage suppressors offer power-handling capabilities only found in larger packages. They are most often used for protecting against transients from inductive switching environments or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. With very fast response times, they are also effective in protection from ESD or EFT. Powermite® package features include a full metallic bottom that eliminates the possibility of solder-flux entrapment during assembly. They also provide unique locking tab acting as an integral heat sink. With its very short terminations, parasitic inductance is minimized to reduce voltage overshoots during fast-rise-time transients.FEATURES• Very low profile surface mount package (1.1mm)• Integral heat sink-locking tabs• Compatible with automatic insertion equipment• Full metallic bottom eliminates flux entrapment• Voltage range 5 volts to 170 volts• Available in both unidirectional or bi-directional (C suffix for bi-directional)MAXIMUM RATINGS• Operating Temperature: -55°C to +150°C• Storage Temperature: -55°C to +150°C• 1500 Watt peak pulse power (10 / 1000 µsec.)• Forward Surge Current: 200 Amps at 8.3 ms (excluding bidirectional)• Repetition surge rate (duty factor): 0.01%• Thermal resistance: 2.5°C / watt junction to tab 130°C / watt junction to ambient with recommended footprint• Lead and mounting temperature: 260°C for 10 secAPPLICATIONS / BENEFITS• Secondary lightning transient protection• Inductive switching transient protection• Small footprint• Very low parasitic inductance for minimal voltage overshoot• Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively and IEC61000-4-5 for surge levels defined herein

主要特徵

Very low profile surface mount package (1.1mm)
Integral heat sink-locking tabs
Compatible with automatic insertion equipment
Full metallic bottom eliminates flux entrapment
Voltage range 5 volts to 170 volts
Available in both unidirectional or bi-directional (C suffix for bi-directional)
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
1500 Watt peak pulse power (10 / 1000 µsec.)
Forward Surge Current: 200 Amps at 8.3 ms (excluding bidirectional)
Repetition surge rate (duty factor): 0.01%
Thermal resistance: 2.5°C / watt junction to tab 130°C / watt junction to ambient with recommended footprint
Lead and mounting temperature: 260°C for 10 sec

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category !	DRAM	RoHS	Details
Type	SDRAM - DDR4	Mounting Style	SMD/SMT
Package / Case	FBGA-78	Data Bus Width	8 bit
Organization	1 G x 8	Memory Size !	8 Gbit
Maximum Clock Frequency	1.2 GHz	Supply Voltage - Max	1.26 V
Supply Voltage - Min	1.14 V	Supply Current - Max	68 mA
Minimum Operating Temperature	0 C	Maximum Operating Temperature !	+ 95 C
Series	MT40A	Brand	Micron
Product Type !	DRAM	Factory Pack Quantity	1140
Subcategory	Memory & Data Storage

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 MT40A1G8WE-083E:B PDF 下載

常見問題解答

What is MT40A1G8WE-083E:B?

The MT40A1G8WE-083E:B is a 1Gb DDR4 SDRAM module designed by Micron Technology. It is a high-density, high-speed memory module suitable for use in a wide range of computing and networking applications, including servers, workstations, and high-performance computing systems.

How Does MT40A1G8WE-083E:B Work?

The MT40A1G8WE-083E:B works by providing synchronous dynamic random-access memory (SDRAM) functionality with a high-speed DDR4 interface. It enables fast data transfer and storage for processor operations, ensuring efficient performance in data-intensive applications.

How Many Pins does MT40A1G8WE-083E:B have and What are the Functions of the Pinout Configuration?

The MT40A1G8WE-083E:B DDR4 SDRAM module is typically designed with a 260-pin SODIMM (Small Outline Dual In-Line Memory Module) form factor. The pinout configuration includes:

Data Lines: Multiple pins for bi-directional data transfer between the SDRAM module and the system.
Address Lines: Pins for specifying the memory address for read or write operations.
Control Lines: Pins for controlling various operations such as row activation, column activation, and precharging.
Power and Ground Pins: Pins for providing power supply and ground connections to the module.
Clock and Reset Pins: Pins for clock signal input and reset signal.

What are the Pros and Cons of MT40A1G8WE-083E:B?

Pros:

High Density: Provides 1Gb of memory in a single module, enabling higher memory capacity in space-constrained systems.
High Speed: Offers high-speed DDR4 interface for rapid data transfer and access.
Low Power Consumption: Operates at low voltage levels, contributing to energy efficiency.
Wide Compatibility: Compatible with a variety of computing and networking platforms designed for DDR4 memory.
Reliable Performance: Provides stable and reliable memory operations for demanding applications.

Cons:

Cost: Higher density and speed may lead to a higher cost compared to lower-density or older generation memory modules.
Compatibility: Requires compatibility with DDR4-enabled systems and may not be backward compatible with older DDR standards.
Complexity: DDR4 module design and layout may require careful consideration for signal integrity and timing.

Are There Any Equivalents/Alternatives to MT40A1G8WE-083E:B for Recommendation?

Similar high-density DDR4 SDRAM modules include the Samsung M378A1G43DB0-CPB and the Hynix HMA81GS6DJR8N-XN.
Alternatives to the MT40A1G8WE-083E:B include DDR4 SDRAM modules from other manufacturers such as Samsung, SK Hynix, and Kingston.