MT28GU01GAAA1EGC-0SIT

Name: MT28GU01GAAA1EGC-0SIT
Rating: 4.5 (10 reviews)

1G-bit Capacity

6,043 有效庫存

MT28GU01GAAA1EGC-0SIT

有效庫存6,043

1G-bit Capacity

製造商零件號 # : MT28GU01GAAA1EGC-0SIT
包裝/封裝: BGA
零件狀態 : Active
製造商: Micron Technology
產品分類 : Memory

品質保證

從我們的供應鍊網路採購的所有零件都經過嚴格的進貨檢驗流程。這種細緻的檢查可確保客戶收到的零件是正品並符合要求的標準。此外，我們還保存這些檢查的詳細記錄，以確保整個供應鏈的透明度和可追溯性。

認證

我們已成功獲得各項認證標準，並建立了自己的專業檢測實驗室。這確保了我們向客戶提供的每件產品都符合最高的品質標準。我們遵守嚴格的測試協議，以保持我們產品的一致性和準確性。為了確保我們的產品是原裝正品，我們還與信譽良好的第三方檢測機構合作進行嚴格的品質測試。我們對品質的承諾延伸到滿足行業、法律、監管和 ISO 9001:2015 的要求。

運輸與付款

關於運送

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關於付款

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服務與包裝

About After Sales Service

All Parts Extended Quality Guarantee

自發貨之日起 90 天內發起申請。

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關於包裝

在包裝方面，我們的產品均精心包裝在防靜電袋中，以提供ESD防靜電保護。外包裝堅固耐用且閉合牢固。我們支持各種包裝方法，例如捲帶式、切帶式、管式或託盤式。

例子

捲帶式

剪膠帶

管或託盤

MT28GU01GAAA1EGC-0SIT 數據表

目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!

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詳細說明

The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process.The MT28F004B3 and MT28F400B3 are organized into seven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.FEATURES• Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks• Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1• Compatible with 0.3µm Smart 3 device• Advanced 0.18µm CMOS floating-gate process• Address access time: 80ns• 100,000 ERASE cycles• Industry-standard pinouts• Inputs and outputs are fully TTL-compatible• Automated write and erase algorithm• Two-cycle WRITE/ERASE sequence• Byte- or word-wide READ and WRITE (MT28F400B3, 256K x 16/512K x 8)• Byte-wide READ and WRITE only (MT28F004B3, 512K x 8)• TSOP and SOP packaging options

主要特徵

Seven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
Smart 3 technology (B3):
3.3V ±0.3V VCC

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category !	NOR Flash	RoHS	Details
Series	MT28GU	Brand	Micron
Product Type !	NOR Flash	Factory Pack Quantity	1800
Subcategory	Memory & Data Storage

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 MT28GU01GAAA1EGC-0SIT PDF 下載

常見問題解答

What is MT28GU01GAAA1EGC-0SIT?

The MT28GU01GAAA1EGC-0SIT is a 1 Gb (Gigabit) NAND flash memory device manufactured by Micron Technology. It is designed for use in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSD).

How Does MT28GU01GAAA1EGC-0SIT Work?

The MT28GU01GAAA1EGC-0SIT works by storing data in a non-volatile manner, allowing the data to be retained even when the power is turned off. It uses NAND flash memory technology to store and retrieve digital information, making it suitable for applications requiring high-speed data storage and retrieval.

How Many Pins does MT28GU01GAAA1EGC-0SIT have and What are the Functions of the Pinout Configuration?

The MT28GU01GAAA1EGC-0SIT is commonly available in a BGA (Ball Grid Array) package, with a specific pinout configuration including:

DQ0-DQ7: Data input/output pins for the memory array.
RY/BY: Ready/Busy output pin indicating the status of the memory operation.
CE#: Chip Enable input pin for activating the device.
WE#: Write Enable input pin for initiating write operations.
RE#: Read Enable input pin for initiating read operations.

What are the Pros and Cons of MT28GU01GAAA1EGC-0SIT?

Pros:

High Capacity: Provides 1 Gb of storage space for large data storage requirements.
Fast Data Access: Offers high-speed data read and write operations, suitable for demanding applications.
Non-Volatile Storage: Retains data without power, making it suitable for storing critical information.
Small Form Factor: BGA package with a compact footprint for space-constrained designs.

Cons:

Complex Interface: Requires careful interfacing and control signals for proper operation within a system.
Endurance and Retention: NAND flash memory may have limited write/erase cycles and data retention compared to other memory types.
Controller Integration: Typically requires a memory controller to manage the data storage and retrieval operations.

Are There Any Equivalents/Alternatives to MT28GU01GAAA1EGC-0SIT for Recommendation?

Similar NAND flash memory alternatives to the MT28GU01GAAA1EGC-0SIT include products from manufacturers such as Samsung, Toshiba, and SK Hynix. Specific alternatives may include the K9GBG08U0M from Samsung and the THGBMHG7C1LBAIL from Toshiba.