K6R4008V1D-UI10

有效庫存4,392

44-Pin TSOP-II Packaging for Easy Installation and Integration

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About After Sales Service

All Parts Extended Quality Guarantee

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K6R4008V1D-UI10 數據表

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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!

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詳細說明

Ideal for devices demanding fast and reliable memory storage, the K6R4008V1D-UI10 stands out as a premier choice for professionals seeking peak performance. Its innovative design and superior functionality make it a standout option in the realm of memory chips, offering unmatched speed and efficiency for a wide range of applications. From networking equipment to industrial control systems, this SDRAM chip excels in delivering seamless data management solutions

K6R4008V1D-UI10

主要特徵

  • This module supports Burst Length of 1-8
  • The memory chip is compliant with JEDEC Standard
  • The maximum clock speed is 400 MHz
  • It has a latency of 3-4 CPU clocks
  • K6R4008V1D-UI10 supports Fast Page Mode
  • The module has a power consumption of 2W

應用

  • K6R4008V1D-UI10 for personal computers
  • High-performance computing with K6R4008V1D-UI10
  • Networking devices benefit from K6R4008V1D-UI10

規格

以下是所選零件的基本參數,涉及零件的特性及其所屬類別。

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Obsolete Reach Compliance Code
ECCN Code 3A991.B.2.A HTS Code ! 8542.32.00.41
Access Time-Max 10 ns I/O Type COMMON
JESD-30 Code R-PDSO-G44 JESD-609 Code e1
Memory Density 4194304 bit Memory IC Type STANDARD SRAM
Memory Width 8 Moisture Sensitivity Level 3
Number of Terminals 44 Number of Words 524288 words
Number of Words Code 512000 Operating Mode ! ASYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 512KX8 Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY Package Code TSOP
Package Equivalence Code TSOP44,.46,32 Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260 Power Supplies ! 3.3 V
Qualification Status ! Not Qualified Standby Current-Max 0.005 A
Standby Voltage-Min 3 V Supply Current-Max 0.075 mA
Supply Voltage-Nom (Vsup) 3.3 V Surface Mount ! YES
Technology CMOS Temperature Grade ! INDUSTRIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) Terminal Form ! GULL WING
Terminal Pitch ! 0.8 mm Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。

初步規格 K6R4008V1D-UI10 PDF 下載

常見問題解答

What is K6R4008V1D-UI10?

The K6R4008V1D-UI10 is a 512K x 8 bit low-power CMOS static RAM (SRAM) memory chip manufactured by Samsung. It is commonly used in various electronic devices and embedded systems for data storage and high-speed access.

How Does K6R4008V1D-UI10 Work?

The K6R4008V1D-UI10 operates as a volatile memory chip where data is stored as long as power is supplied. It offers high-speed access times and low power consumption, making it suitable for applications requiring fast data retrieval with minimal power usage.

How Many Pins does K6R4008V1D-UI10 have and What are the Functions of the Pinout Configuration?

The K6R4008V1D-UI10 is housed in a 32-pin SOJ (Small Outline J-lead) package. The pinout configuration includes:

  • VCC: Power supply pin.
  • GND: Ground pin.
  • CS: Chip select for device activation.
  • WE: Write enable for write operations.
  • OE: Output enable for data output.
  • Address Pins A0-A18: Address inputs for selecting memory location.
  • Data Pins DQ0-DQ7: Data input/output pins.

What are the Pros and Cons of K6R4008V1D-UI10?

Pros:

  • High-Speed Access: Offers fast access times for efficient data retrieval.
  • Low Power Consumption: Operates with low power, extending battery life in portable devices.
  • Easy Integration: Simple interface and control signals for easy integration into systems.
  • Reliable Storage: Provides non-volatile storage of data as long as power is supplied.

Cons:

  • Finite Storage Capacity: Limited to 512K x 8 bits of storage space.
  • Volatility: Data is lost when power is turned off, requiring backup solutions for critical data.
  • Cost: Higher cost per bit compared to larger capacity storage solutions.

Are There Any Equivalents/Alternatives to K6R4008V1D-UI10 for Recommendation?

Some equivalents or alternatives to the K6R4008V1D-UI10 include:

  • IS62WV51216BLL from Integrated Silicon Solution, Inc.
  • HY62WT08081E from Hynix Semiconductor.
  • HM628128ALP from Hitachi.

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