JS28F256P30BF
Flash, 16MX16, 110ns, PDSO56, LEAD FREE, TSOP-56
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JS28F256P30BF 數據表
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詳細說明
IntroductionThis document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications.Product Features■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ) — 1.8 V buffered programming at 7 µs/byte (Typ)■ Architecture — Multi-Level Cell Technology: Highest Density at Lowest Cost — Asymmetrically-blocked architecture — Four 32-KByte parameter blocks: top or bottom configuration — 128-KByte main blocks■ Voltage and Power —VCC(core) voltage: 1.7 V – 2.0 V —VCCQ (I/O) voltage: 1.7 V – 3.6 V — Standby current: 55 µA (Typ) for 256-Mbit — 4-Word synchronous read current: 13 mA (Typ) at 40 MHz■ Quality and Reliability — Operating temperature: –40 °C to +85 °C • 1-Gbit in SCSP is –30 °C to +85 °C — Minimum 100,000 erase cycles per block — ETOX™ VIII process technology (130 nm)■ Security — One-Time Programmable Registers: • 64 unique factory device identifier bits • 64 user-programmable OTP bits • Additional 2048 user-programmable OTP bits — Selectable OTP Space in Main Array: • 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration) — Absolute write protection: VPP= VSS — Power-transition erase/program lockout — Individual zero-latency block locking — Individual block lock-down■ Software — 20 µs (Typ) program suspend — 20 µs (Typ) erase suspend —Intel® Flash Data Integrator optimized — Basic Command Set and Extended Command Set compatible — Common Flash Interface capable■ Density and Packaging — 64/128/256-Mbit densities in 56-Lead TSOP package — 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package — 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP — 16-bit wide data bus
主要特徵
- High performance
- — 85/88 ns initial access
- — 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
- — 25 ns asynchronous-page read mode
- — 4-, 8-, 16-, and continuous-word burst mode
- — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
- — 1.8 V buffered programming at 7 µs/byte (Typ)
- Architecture
- — Multi-Level Cell Technology: Highest Density at Lowest Cost
- — Asymmetrically-blocked architecture
- — Four 32-KByte parameter blocks: top or bottom configuration
- — 128-KByte main blocks
- Voltage and Power
- —VCC(core) voltage: 1.7 V – 2.0 V
- —VCCQ (I/O) voltage: 1.7 V – 3.6 V
- — Standby current: 55 µA (Typ) for 256-Mbit
- — 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
- Quality and Reliability
- — Operating temperature: –40 °C to +85 °C
- 1-Gbit in SCSP is –30 °C to +85 °C
- — Minimum 100,000 erase cycles per block
- — ETOX™ VIII process technology (130 nm)
- Security
- — One-Time Programmable Registers:
- 64 unique factory device identifier bits
- 64 user-programmable OTP bits
- Additional 2048 user-programmable OTP bits
- — Selectable OTP Space in Main Array:
- 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
- — Absolute write protection: VPP= VSS
- — Power-transition erase/program lockout
- — Individual zero-latency block locking
- — Individual block lock-down
- Software
- — 20 µs (Typ) program suspend
- — 20 µs (Typ) erase suspend
- —Intel® Flash Data Integrator optimized
- — Basic Command Set and Extended Command Set compatible
- — Common Flash Interface capable
- Density and Packaging
- — 64/128/256-Mbit densities in 56-Lead TSOP package
- — 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
- — 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
- — 16-bit wide data bus
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Part Package Code | TSOP |
Pin Count ! | 56 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.51 |
Access Time-Max | 110 ns | Additional Feature ! | ASYNCHRONOUS READ MODE |
Boot Block | BOTTOM | Clock Frequency-Max (fCLK) | 40 MHz |
Command User Interface | YES | Common Flash Interface | YES |
Data Polling | NO | JESD-30 Code | R-PDSO-G56 |
JESD-609 Code | e3 | Length | 18.4 mm |
Memory Density | 268435456 bit | Memory IC Type | FLASH |
Memory Width | 16 | Number of Functions | 1 |
Number of Sectors/Size | 4,255 | Number of Terminals | 56 |
Number of Words | 16777216 words | Number of Words Code | 16000000 |
Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 85 °C |
Operating Temperature-Min | -40 °C | Organization | 16MX16 |
Package Body Material | PLASTIC/EPOXY | Package Code | TSSOP |
Package Equivalence Code | TSSOP56,.8,20 | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Parallel/Serial | PARALLEL |
Power Supplies ! | 1.8,1.8/3.3 V | Programming Voltage ! | 1.8 V |
Qualification Status ! | Not Qualified | Seated Height-Max | 1.2 mm |
Sector Size | 16K,64K | Standby Current-Max | 0.00021 A |
Supply Current-Max | 0.031 mA | Supply Voltage-Max (Vsup) | 2 V |
Supply Voltage-Min (Vsup) | 1.7 V | Supply Voltage-Nom (Vsup) | 1.8 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | INDUSTRIAL | Terminal Finish | MATTE TIN |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.5 mm |
Terminal Position | DUAL | Toggle Bit | NO |
Type | NOR TYPE | Width | 14 mm |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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