IRFR3607
Power Field-Effect Transistor with specifications: 56A I(D), 75V, 0.009ohm, N-Channel, Silicon, TO-252AA, PLASTIC, DPAK-3IRFR3607
Power Field-Effect Transistor with specifications: 56A I(D), 75V, 0.009ohm, N-Channel, Silicon, TO-252AA, PLASTIC, DPAK-3
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服務與包裝
服務與包裝
About After Sales Service
All Parts Extended Quality Guarantee
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IRFR3607 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
主要特徵
- Enhanced power MOSFET
- Fast switching speeds
- High performance Schottky diode
- Low on-resistance
- Low gate charge
- High current capability
- Industry standard TO-252 package
- RoHS compliant
應用
- Power management
- Switching applications
- Motor control
- Electronic ballasts
- DC-DC converters
- Power supplies
- Motor drives
- High-speed switching circuits
- Industrial applications
- Automotive applications
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Mounting | SMD | Package | DPAK (TO-252) |
Ptot max | 140.0 W | Tj max | 175.0 °C |
VGS max | 20.0 V | Moisture Sensitivity Level | 1 |
Polarity | N | RthJC max | 1.05 K/W |
VDS max | 75.0 V | RDS (on) max | 9.0 mΩ |
VGS(th) max | 4.0 V | VGS(th) min | 2.0 V |
ID max | 80.0 A | Operating Temperature max | 175.0 °C |
Operating Temperature min | -55.0 °C |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is IRFR3607?
The IRFR3607 is a power MOSFET designed for high efficiency and high power applications. It is commonly used in power supplies, motor control, and automotive systems where high switching speeds and low conduction losses are critical.
How Does IRFR3607 Work?
The IRFR3607 works as a voltage-controlled switch, allowing or disallowing the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate terminal, the MOSFET conducts, enabling power to flow through the device. It operates with high efficiency and can handle large currents and high frequencies.
How Many Pins does IRFR3607 have and What are the Functions of the Pinout Configuration?
The IRFR3607 is housed in a TO-252 package, which typically includes three pins:
- Gate (G): The gate terminal is used to control the switching of the MOSFET.
- Drain (D): The drain terminal is where the output power is taken from.
- Source (S): The source terminal is where the current flows out of the MOSFET.
What are the Pros and Cons of IRFR3607?
Pros:
- High Efficiency: The IRFR3607 offers low conduction losses and high switching speeds, leading to high overall efficiency.
- High Current Handling: Capable of handling large currents, making it suitable for power applications.
- Compact Package: Housed in a TO-252 package, which is space-efficient and allows for easy mounting on a PCB.
Cons:
- Gate Drive Voltage: May require a relatively high gate drive voltage for full enhancement, which can affect driver circuitry design.
- Heat Dissipation: High power applications may require additional heat sinking for proper thermal management.
Are There Any Equivalents/Alternatives to IRFR3607 for Recommendation?
Alternatives to the IRFR3607 include the IRF3205 from Infineon and the FDP7030L from Fairchild Semiconductor, both of which are power MOSFETs suitable for high power applications.
推薦零件
-
IRFS40-10P: Fast switching speed with minimal noise disturbance for audio applications
製造商: Infineon 包裝/箱: D2PAK 7pin (TO-263 7pin)
7,373 有存貨
貨物週期: 3~7 天
最小訂購量為 1