HY5DU121622CTP-D43
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 PITCH, ROHS COMPLIANT, TSOP2-66HY5DU121622CTP-D43
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 PITCH, ROHS COMPLIANT, TSOP2-66
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HY5DU121622CTP-D43 數據表
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詳細說明
The Hynix HY5DV641622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth.FEATURES •3.3V for VDDand 2.5V for VDDQpower supply • All inputs and outputs are compatible with SSTL_2 interface • JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch • Fully differential clock inputs (CK, /CK) operation • Double data rate interface • Source synchronous - data transaction aligned to bidirectional data strobe (DQS) • x16 device has 2 bytewide data strobes (LDQS, UDQS) per each x8 I/O • Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) • Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe • All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock • Write mask byte controls by LDM and UDM • Programmable /CAS Latency 3 / 4 supported • Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode • Internal 4 bank operations with single pulsed /RAS • tRAS Lock-Out function supported • Auto refresh and self refresh supported • 4096 refresh cycles / 64ms • Full, Half and Matched Impedance(Weak) strength driver option controlled by EMRS
![](/files/uploads/product/b/c184c8ef144e4af8b544341cf4004d95.webp)
主要特徵
- 3.3V for VDDand 2.5V for VDDQpower supply
- All inputs and outputs are compatible with SSTL_2 interface
- JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch
- Fully differential clock inputs (CK, /CK) operation
- Double data rate interface
- Source synchronous - data transaction aligned to bidirectional data strobe (DQS)
- x16 device has 2 bytewide data strobes (LDQS, UDQS) per each x8 I/O
- Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ)
- Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe
- All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock
- Write mask byte controls by LDM and UDM
- Programmable /CAS Latency 3 / 4 supported
- Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode
- Internal 4 bank operations with single pulsed /RAS
- tRAS Lock-Out function supported
- Auto refresh and self refresh supported
- 4096 refresh cycles / 64ms
- Full, Half and Matched Impedance(Weak) strength driver option controlled by EMRS
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Part Package Code | TSOP2 |
Pin Count ! | 66 | Reach Compliance Code | |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.28 |
Access Mode ! | FOUR BANK PAGE BURST | Access Time-Max | 0.7 ns |
Additional Feature ! | AUTO/SELF REFRESH | Clock Frequency-Max (fCLK) | 200 MHz |
I/O Type | COMMON | Interleaved Burst Length | 2,4,8 |
JESD-30 Code | R-PDSO-G66 | JESD-609 Code | e6 |
Length | 22.225 mm | Memory Density | 536870912 bit |
Memory IC Type | DDR1 DRAM | Memory Width | 16 |
Number of Functions | 1 | Number of Ports ! | 1 |
Number of Terminals | 66 | Number of Words | 33554432 words |
Number of Words Code | 32000000 | Operating Mode ! | SYNCHRONOUS |
Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
Organization | 32MX16 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | TSOP2 |
Package Equivalence Code | TSSOP66,.46 | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE | Power Supplies ! | 2.6 V |
Qualification Status ! | Not Qualified | Refresh Cycles | 8192 |
Seated Height-Max | 1.194 mm | Self Refresh | YES |
Sequential Burst Length | 2,4,8 | Standby Current-Max | 0.01 A |
Supply Voltage-Max (Vsup) | 2.7 V | Supply Voltage-Min (Vsup) | 2.5 V |
Supply Voltage-Nom (Vsup) | 2.6 V | Surface Mount ! | YES |
Technology | CMOS | Temperature Grade ! | COMMERCIAL |
Terminal Finish | TIN BISMUTH | Terminal Form ! | GULL WING |
Terminal Pitch ! | 0.65 mm | Terminal Position | DUAL |
Width | 10.16 mm |
Specification Comparison
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is HY5DU121622CTP-D43?
The HY5DU121622CTP-D43 is a 512Mb Double Data Rate 2 (DDR2) Synchronous Dynamic Random Access Memory (SDRAM) chip designed by SK Hynix. It is commonly used in computing systems, networking equipment, and consumer electronics for high-speed data storage and retrieval.
How Does HY5DU121622CTP-D43 Work?
The HY5DU121622CTP-D43 works by storing and retrieving digital data with high speed and efficiency. It utilizes double data rate architecture to transfer data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate. The SDRAM chip is synchronized with the system clock to ensure accurate and timely data operations.
How Many Pins does HY5DU121622CTP-D43 have and What are the Functions of the Pinout Configuration?
The HY5DU121622CTP-D43 is housed in a 84-ball FBGA (Fine-pitch Ball Grid Array) package. The pinout configuration includes:
- VDD, VDDQ: Power supply pins for core and I/O, respectively.
- VSS, VSSQ: Ground pins for core and I/O, respectively.
- DQ, DM: Data input/output and data mask pins.
- CLK, /CLK: Clock input and its complement.
- CS, /CS: Chip select input and its complement.
- WE, /CAS, /RAS: Write enable, column address strobe, and row address strobe inputs.
- BA0-BA2: Bank address inputs.
- ODT: On-die termination control.
What are the Pros and Cons of HY5DU121622CTP-D43?
Pros:
- High-Speed Operation: Provides high-speed data transfer suitable for demanding applications.
- Double Data Rate: Utilizes DDR2 architecture for efficient data transfer on both clock edges.
- Large Capacity: Offers 512Mb storage capacity for storing significant amounts of data.
- Synchronous Interface: Synchronizes with the system clock for accurate and reliable operation.
- Compact Form Factor: The FBGA package allows for space-efficient placement on PCBs.
Cons:
- Component Matching: Requires careful PCB layout and signal integrity considerations for optimal performance.
- Complex Initialization: DDR2 SDRAM initialization sequence may be more complex compared to older SDRAM types.
- Power Consumption: Higher speed operation may result in relatively higher power consumption.
Are There Any Equivalents/Alternatives to HY5DU121622CTP-D43 for Recommendation?
- The MT47H64M16HR-3 from Micron Technology is a comparable DDR2 SDRAM chip with similar specifications.
- Possible alternatives to the HY5DU121622CTP-D43 include the K4T51163QJ-BCE7 from Samsung and the H5PS5162GFR-S6C from SK Hynix.
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