HY57V561620CT-H
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54HY57V561620CT-H
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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HY57V561620CT-H 數據表
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詳細說明
The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.HY57V561620C(L)T(P) Series is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)FEATURES• Single 3.3±0.3V power supply• All device pins are compatible with LVTTL interface• JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch (Leaded Package or Lead Free Package)• All inputs and outputs referenced to positive edge of system clock• Data mask function by UDQM, LDQM• Internal four banks operation• Auto refresh and self refresh• 8192 refresh cycles / 64ms• Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst• Programmable CAS Latency ; 2, 3 Clocks
主要特徵
- Single 3.3±0.3V power supply
- All device pins are compatible with LVTTL interface
- JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin
- pitch (Leaded Package or Lead Free Package)
- All inputs and outputs referenced to positive edge of system
- clock
- Data mask function by UDQM, LDQM
- Internal four banks operation
- Auto refresh and self refresh
- 8192 refresh cycles / 64ms
- Programmable Burst Length and Burst Type
- - 1, 2, 4, 8 or Full page for Sequential Burst
- - 1, 2, 4 or 8 for Interleave Burst
- Programmable CAS Latency ; 2, 3 Clocks
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Pbfree Code | No | Rohs Code | No |
Part Life Cycle Code | Obsolete | Part Package Code | TSOP2 |
Pin Count ! | 54 | Reach Compliance Code | |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.24 |
Access Mode ! | FOUR BANK PAGE BURST | Access Time-Max | 5.4 ns |
Additional Feature ! | AUTO/SELF REFRESH | Clock Frequency-Max (fCLK) | 133 MHz |
I/O Type | COMMON | Interleaved Burst Length | 1,2,4,8 |
JESD-30 Code | R-PDSO-G54 | JESD-609 Code | e0 |
Length | 22.238 mm | Memory Density | 268435456 bit |
Memory IC Type | SYNCHRONOUS DRAM | Memory Width | 16 |
Number of Functions | 1 | Number of Ports ! | 1 |
Number of Terminals | 54 | Number of Words | 16777216 words |
Number of Words Code | 16000000 | Operating Mode ! | SYNCHRONOUS |
Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
Organization | 16MX16 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | TSOP2 |
Package Equivalence Code | TSOP54,.46,32 | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE | Power Supplies ! | 3.3 V |
Qualification Status ! | Not Qualified | Refresh Cycles | 8192 |
Seated Height-Max | 1.194 mm | Self Refresh | YES |
Sequential Burst Length | 1,2,4,8,FP | Standby Current-Max | 0.001 A |
Supply Current-Max | 0.22 mA | Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 3 V | Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | COMMERCIAL | Terminal Finish | TIN LEAD |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.8 mm |
Terminal Position | DUAL | Width | 10.16 mm |
Specification Comparison
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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