H5DU2562GTR-E3C
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66H5DU2562GTR-E3C
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
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製造商零件號 # : H5DU2562GTR-E3C
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包裝/封裝: TSOP66
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製造商: SKHYNIX
品質保證
品質保證
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H5DU2562GTR-E3C 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
The H5DU2562GFR is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.FEATURES •VDD, VDDQ= 2.5V +/- 0.2V • All inputs and outputs are compatible with SSTL_2 interface • Fully differential clock inputs (CK, /CK) operation • Double data rate interface • Source synchronous - data transaction aligned to bidirectional data strobe (DQS) • x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O • Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) • On chip DLL align DQ and DQS transition with CK transition • DM mask write data-in at the both rising and falling edges of the data strobe • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock • Programmable CAS latency 2/2.5 (DDR200, 266, 333), 3 (DDR400) and 4 (DDR500) supported • Programmable burst length 2/4/8 with both sequential and interleave mode • Internal four bank operations with single pulsed/RAS • Auto refresh and self refresh supported • tRAS lock out function supported • 8192 refresh cycles/64ms •60 Ball FBGA Package Type • This product is in compliance with the directive pertaining of RoHS.
主要特徵
- VDD, VDDQ= 2.5V +/- 0.2V
- All inputs and outputs are compatible with SSTL_2 interface
- Fully differential clock inputs (CK, /CK) operation
- Double data rate interface
- Source synchronous - data transaction aligned to bidirectional data strobe (DQS)
- x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O
- Data outputs on DQS edges when read (edged DQ)
- Data inputs on DQS centers when write (centered DQ)
- On chip DLL align DQ and DQS transition with CK transition
- DM mask write data-in at the both rising and falling edges of the data strobe
- All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
- Programmable CAS latency 2/2.5 (DDR200, 266, 333), 3 (DDR400) and 4 (DDR500) supported
- Programmable burst length 2/4/8 with both sequential and interleave mode
- Internal four bank operations with single pulsed/RAS
- Auto refresh and self refresh supported
- tRAS lock out function supported
- 8192 refresh cycles/64ms
- 60 Ball FBGA Package Type
- This product is in compliance with the directive pertaining of RoHS.
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Rohs Code | Yes | Part Life Cycle Code | Obsolete |
Part Package Code | TSOP2 | Pin Count ! | 66 |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code ! | 8542.32.00.24 | Access Mode ! | FOUR BANK PAGE BURST |
Access Time-Max | 0.7 ns | Additional Feature ! | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 200 MHz | I/O Type | COMMON |
Interleaved Burst Length | 2,4,8 | JESD-30 Code | R-PDSO-G66 |
JESD-609 Code | e6 | Length | 22.225 mm |
Memory Density | 268435456 bit | Memory IC Type | DDR1 DRAM |
Memory Width | 16 | Number of Functions | 1 |
Number of Ports ! | 1 | Number of Terminals | 66 |
Number of Words | 16777216 words | Number of Words Code | 16000000 |
Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 70 °C |
Operating Temperature-Min | Organization | 16MX16 | |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | TSSOP | Package Equivalence Code | TSSOP66,.46 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
Peak Reflow Temperature (Cel) | 260 | Power Supplies ! | 2.5 V |
Qualification Status ! | Not Qualified | Refresh Cycles | 8192 |
Seated Height-Max | 1.194 mm | Self Refresh | YES |
Sequential Burst Length | 2,4,8 | Standby Current-Max | 0.004 A |
Supply Current-Max | 0.21 mA | Supply Voltage-Max (Vsup) | 2.7 V |
Supply Voltage-Min (Vsup) | 2.3 V | Supply Voltage-Nom (Vsup) | 2.5 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | COMMERCIAL | Terminal Finish | Tin/Bismuth (Sn98Bi2) |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.65 mm |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 20 |
Width | 10.155 mm |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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