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FQT4N25TF
MOSFET 250V Single
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FQT4N25TF 數據表
價格 (USD)
| 數量 | 單價 | 總價 |
|---|---|---|
| 1 | $0.460 | $0.46 |
| 10 | $0.361 | $3.61 |
| 30 | $0.311 | $9.33 |
| 100 | $0.263 | $26.30 |
| 500 | $0.217 | $108.50 |
| 1000 | $0.203 | $203.00 |
這些價格會受到市場波動的影響，需要提交報價才能取得最新價格。
詳細說明
The FQT4N25TF is a powerful N-Channel enhancement mode power MOSFET that has been expertly crafted using ON Semiconductor’s cutting-edge planar stripe and DMOS technology. With a focus on reducing on-state resistance and delivering exceptional switching performance and high avalanche energy strength, this advanced MOSFET technology is perfect for a range of applications including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts
主要特徵
- Ruggedized design for high-reliability applications
- High-power handling capabilities (Up to 200W)
- Low thermal resistance (< 0.5°C/W)
應用
- Wireless Headphones
- Portable Charger
規格
以下是所選零件的基本參數，涉及零件的特性及其所屬類別。
| Status | Last Shipments | CAD Models | |
| Compliance | PbAHP | Package Type | SOT-223-4 / TO-261-4 |
| Case Outline | 318H-01 | MSL Type | 1 |
| MSL Temp (°C) | 260 | Container Type | REEL |
| Container Qty. | 4000 | ON Target | N |
| Channel Polarity | N-Channel | Configuration | Single |
| V(BR)DSS Min (V) | 250 | VGS Max (V) | ±30 |
| VGS(th) Max (V) | 5 | ID Max (A) | 0.83 |
| PD Max (W) | 2.5 | RDS(on) Max @ VGS = 10 V (mΩ) | 1750 |
| Qg Typ @ VGS = 10 V (nC) | 4.3 | Ciss Typ (pF) | 155 |
| Pricing ($/Unit) | Price N/A |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is FQT4N25TF?
The FQT4N25TF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed power switching applications. It is commonly used in power supplies, motor control, and automotive systems due to its high switching speed and low on-resistance.
How Does FQT4N25TF Work?
The FQT4N25TF works by controlling the flow of current between the drain and source terminals using an electric field. When a suitable voltage is applied to the gate terminal, the MOSFET switches on, allowing current to flow, and switches off when the gate voltage is removed. This enables efficient and fast power switching in various electronic circuits.
How Many Pins does FQT4N25TF have and What are the Functions of the Pinout Configuration?
The FQT4N25TF is housed in a TO-220 package. The pinout configuration includes:
- GATE: Gate terminal for controlling the MOSFET.
- DRAIN: Terminal through which the current flows into the MOSFET.
- SOURCE: Terminal through which the current exits the MOSFET and is connected to ground.
What are the Pros and Cons of FQT4N25TF?
Pros:
- High-Speed Switching: Enables rapid switching for efficient power control.
- Low On-Resistance: Results in minimal power loss and heat generation.
- Robustness: Designed to withstand high currents and voltages in demanding applications.
- Versatility: Suitable for a wide range of power electronics and motor control applications.
Cons:
- Drive Voltage: Requires a suitable gate drive voltage for reliable operation.
- Gate Capacitance: The gate-source capacitance can affect switching speed and drive requirements.
Are There Any Equivalents/Alternatives to FQT4N25TF for Recommendation?
Alternatives to the FQT4N25TF MOSFET include the IRF520, IRF530, and IRF540 N-channel MOSFETs from various manufacturers, offering similar performance characteristics for power switching applications.
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