FQD10N20CTM
MOSFET N-CH/200V/10A/QFET
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FQD10N20CTM 數據表
價格 (USD)
數量 | 單價 | 總價 |
---|---|---|
1 | $1.266 | $1.27 |
10 | $1.067 | $10.67 |
30 | $0.958 | $28.74 |
100 | $0.834 | $83.40 |
500 | $0.780 | $390.00 |
1000 | $0.754 | $754.00 |
這些價格會受到市場波動的影響,需要提交報價才能取得最新價格。
詳細說明
The FQD10N20CTM N-Channel power MOSFET is a cutting-edge semiconductor device designed to deliver high performance in a compact package. Utilizing a unique planar stripe and DMOS technology, this MOSFET boasts reduced on-state resistance for improved efficiency and enhanced switching capabilities. Whether used in switched mode power supplies, active power factor correction circuits, or electronic lamp ballasts, the FQD10N20CTM is sure to meet the requirements of even the most demanding applications
主要特徵
- High-Speed Operation
- Fast Switching Time
- Low Power Consumption
- Compact Packaging
應用
- Smartphones
- Laptops
- Tablets
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Status | Last Shipments | CAD Models | |
Compliance | PbAHP | Package Type | DPAK-3 / TO-252-3 |
Case Outline | 369AS | MSL Type | 1 |
MSL Temp (°C) | 260 | Container Type | REEL |
Container Qty. | 2500 | ON Target | N |
Channel Polarity | N-Channel | Configuration | Single |
V(BR)DSS Min (V) | 200 | VGS Max (V) | ±30 |
VGS(th) Max (V) | 4 | ID Max (A) | 7.8 |
PD Max (W) | 50 | RDS(on) Max @ VGS = 10 V (mΩ) | 360 |
Qg Typ @ VGS = 10 V (nC) | 20 | Ciss Typ (pF) | 395 |
Pricing ($/Unit) | Price N/A |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is FQD10N20CTM?
The FQD10N20CTM is a 200V N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by ON Semiconductor. It is suitable for high-power and high-frequency applications such as power supplies, motor control, and automotive systems.
How Does FQD10N20CTM Work?
The FQD10N20CTM works by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal. It can switch high currents and voltages with low drive power, making it suitable for power management applications.
How Many Pins does FQD10N20CTM have and What are the Functions of the Pinout Configuration?
The FQD10N20CTM is housed in a TO-252 package. The pinout configuration includes:
- GATE: The gate terminal for applying the control voltage.
- DRAIN: The drain terminal for the high-voltage connection.
- SOURCE: The source terminal for the low-voltage connection.
What are the Pros and Cons of FQD10N20CTM?
Pros:
- High Voltage Rating: With a 200V rating, it is suitable for high-voltage applications.
- Low Drive Power: Can switch high currents and voltages with low input power.
- Compact Package: The TO-252 package offers a space-efficient design for compact applications.
Cons:
- Gate Capacitance: May have relatively high gate capacitance, which can affect switching speed in some applications.
- Heat Dissipation: High power dissipation may require proper thermal management for continuous operation.
Are There Any Equivalents/Alternatives to FQD10N20CTM for Recommendation?
- The FQB34N20LTM from ON Semiconductor is a similar N-channel MOSFET suitable for high-power applications.
- Alternatives to the FQD10N20CTM include the IRF1010EZS from Infineon and the STP16NF06 from STMicroelectronics.
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