FCD4N60TM

The FCD4N60TM is characterized as a SuperFET, featuring N-Channel MOSFET technology with a 600V voltage rating and 7A current capacity
5,525 有效庫存

FCD4N60TM

有效庫存5,525

The FCD4N60TM is characterized as a SuperFET, featuring N-Channel MOSFET technology with a 600V voltage rating and 7A current capacity

  • 製造商零件號 # : FCD4N60TM

  • 包裝/封裝: DPAK-3

  • 製造商: Onsemi

  • 產品分類 : Single FETs, MOSFETs

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FCD4N60TM 數據表

價格 (USD)

數量 單價 總價
1 $0.825 $0.82
10 $0.806 $8.06
30 $0.793 $23.79
100 $0.783 $78.30

這些價格會受到市場波動的影響，需要提交報價才能取得最新價格。

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詳細說明

The exceptional benefits of the SuperFET MOSFET technology lie in its ability to optimize efficiency while delivering superior performance in demanding power applications. By minimizing conduction losses and offering enhanced switching capabilities, this MOSFET proves to be a reliable solution for applications requiring high voltage handling and high power efficiency. With its advanced features tailored for efficient power delivery, the SuperFET MOSFET excels in various fields including telecommunications, industrial automation, and consumer electronics

主要特徵

  • Excellent thermal management capability
  • High-quality and reliable performance
  • Suitable for automotive applications
  • Precise control and regulation
  • Fault-tolerant and redundancy capable
  • Economical and easy to maintain

應用

  • Great for all kinds of projects.
  • Perfect for any DIY enthusiast.
  • High quality and reliable option.

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Status Active, Not Rec Compliance PbAHP
Package Type DPAK-3 / TO-252-3 Case Outline 369AS
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 2500
ON Target N Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 600
VGS Max (V) ±30 VGS(th) Max (V) 5
ID Max (A) 3.9 PD Max (W) 50
RDS(on) Max @ VGS = 10 V (mΩ) 1200 Qg Typ @ VGS = 10 V (nC) 12.8
Ciss Typ (pF) 415 Pricing ($/Unit) $0.7012Sample

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 FCD4N60TM PDF 下載

常見問題解答

What is FCD4N60TM?

The FCD4N60TM is a power MOSFET transistor designed for high-power applications. It is part of the FD series from Fairchild Semiconductor, known for its high efficiency and performance in switching power supplies, motor control, and other high-power electronics.

How Does FCD4N60TM Work?

The FCD4N60TM operates as a voltage-controlled switch, allowing or blocking the flow of current based on the applied gate voltage. It features low on-resistance and high current-handling capabilities, making it suitable for power switching applications where efficiency and reliability are crucial.

How Many Pins does FCD4N60TM have and What are the Functions of the Pinout Configuration?

The FCD4N60TM is housed in a TO-220 package. The pinout configuration typically includes:

  • GATE: Gate terminal for controlling the switching operations.
  • DRAIN: Drain terminal for the main current flow.
  • SOURCE: Source terminal connected to the ground reference.

What are the Pros and Cons of FCD4N60TM?

Pros:

  • High Power Handling: Capable of handling high currents and voltages.
  • Low On-Resistance: Provides efficient switching with low power dissipation.
  • Reliability: Known for its reliability in demanding applications.
  • Wide Application Range: Suitable for a variety of power electronics applications.

Cons:

  • Heat Dissipation: May require heat sinking for high-power operation.
  • Drive Requirements: Requires proper gate drive circuitry for optimal performance.

Are There Any Equivalents/Alternatives to FCD4N60TM for Recommendation?

  • Similar alternatives to the FCD4N60TM include the IRF520, IRF540, and IRFP460 power MOSFETs.
  • Equivalents to the FCD4N60TM are the STP4NK60ZFP and FQP50N06L from STMicroelectronics and Fairchild Semiconductor, respectively.

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