DS1230Y-200

Reliable 256Kbit SRAM with 4.5V~5.5V input range and EDIP-28 form factor
3,073 有效庫存

DS1230Y-200

有效庫存3,073

Reliable 256Kbit SRAM with 4.5V~5.5V input range and EDIP-28 form factor

  • 製造商零件號 # : DS1230Y-200

  • 包裝/封裝: EDIP-28

  • 製造商: Analog Devices

  • 產品分類 : Memory

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DS1230Y-200 數據表
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詳細說明

Non-Volatile Sram, 256Kbit, 200Ns, Edip; Memory Type:Sram; Memory Size:256Kbit; Nvram Memory Configuration:32K X 8Bit; Ic Interface Type:-; Access Time:200Ns; Memory Case Style:-; No. Of Pins:28Pins; Supply Voltage Min:4.5V; Msl:- Rohs Compliant: Yes |Maxim Integrated/analog Devices DS1230Y-200+

主要特徵

  • Stereo audio decoding
  • Multilingual support
  • User-friendly interface
  • Error correction mechanism

應用

  • Essential component for electronics
  • Built-in backup system
  • Ideal for complex systems

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category ! NVRAM Package / Case EDIP-28
Interface Type Parallel Memory Size ! 256 kbit
Organization 32 k x 8 Data Bus Width 8 bit
Access Time 200 ns Supply Voltage - Max 5.5 V
Supply Voltage - Min 4.5 V Operating Supply Current 85 mA
Minimum Operating Temperature 0 C Maximum Operating Temperature ! + 70 C
Series DS1230Y Brand Analog Devices / Maxim Integrated
Height 9.4 mm Length 39.12 mm
Mounting Style Through Hole Operating Supply Voltage ! 5 V
Product Type ! NVRAM Factory Pack Quantity 12
Subcategory Memory & Data Storage Type NVSRAM
Width 18.8 mm Part # Aliases DS1230Y

常見問題解答

What is DS1230Y-200?

The DS1230Y-200 is a non-volatile, static RAM (NVSRAM) memory module manufactured by Maxim Integrated. It combines the features of both static RAM and non-volatile EEPROM to provide data retention even when power is removed. The DS1230Y-200 is ideal for applications requiring non-volatile storage of critical data, such as industrial automation, embedded systems, and power meters.

How Does DS1230Y-200 Work?

The DS1230Y-200 operates by storing data in its static RAM array, which is backed up by an integrated lithium battery. When power is removed, the memory automatically transfers the data to the non-volatile EEPROM portion, ensuring retention of information. Upon power-up, the data is restored from the EEPROM back to the RAM array, allowing seamless operation without data loss.

How Many Pins does DS1230Y-200 have and What are the Functions of the Pinout Configuration?

The DS1230Y-200 is housed in a 28-pin DIP (Dual Inline Package) package. The pinout configuration includes:

  • VCC: Power supply pin.
  • GND: Ground pin.
  • CE: Chip enable pin for memory access.
  • OE: Output enable for data output control.
  • WE: Write enable for data writing control.
  • NC: No Connect pin.
  • A0-A13: Address pins for memory addressing.
  • DQ0-DQ7: Data input/output pins.

What are the Pros and Cons of DS1230Y-200?

Pros:

  • Non-Volatile Data Storage: Retains data even in the absence of power.
  • High Reliability: Provides reliable data storage and retrieval for critical applications.
  • Seamless Backup: Automatically transfers data between static RAM and EEPROM sections.
  • Wide Operating Voltage Range: Works well in various supply voltage conditions.

Cons:

  • Higher Cost: Non-volatile memory solutions like the DS1230Y-200 may be more expensive than standard SRAM modules.
  • Limited Endurance: EEPROM portion may have limited write endurance compared to pure SRAM.
  • Complexity: Requires careful management of memory access to prevent data corruption.

Are There Any Equivalents/Alternatives to DS1230Y-200 for Recommendation?

  • The M48Z02 from STMicroelectronics is a similar non-volatile SRAM device.
  • Alternatives to the DS1230Y-200 include the DS1220AD from Maxim Integrated and the FM1608 from Cypress Semiconductor.

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