DS1230AB-100

DS1230AB-100+ is equipped with 256k of nonvolatile SRAM for dependable data storage."
3,416 有效庫存

DS1230AB-100

有效庫存3,416

DS1230AB-100+ is equipped with 256k of nonvolatile SRAM for dependable data storage."

  • 製造商零件號 # : DS1230AB-100

  • 包裝/封裝: EDIP-28

  • 製造商: Analog Devices

  • 產品分類 : Memory

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DS1230AB-100 數據表
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詳細說明

Non-Volatile Sram, 256Kbit, 100Ns, Edip; Memory Type:Sram; Memory Size:256Kbit; Nvram Memory Configuration:32K X 8Bit; Ic Interface Type:-; Access Time:100Ns; Memory Case Style:-; No. Of Pins:28Pins; Supply Voltage Min:4.75V; Msl:- Rohs Compliant: Yes |Maxim Integrated/analog Devices DS1230AB-100+

主要特徵

  • 10 years minimum data retention in the absence of external power
  • Data is automatically protected during power loss
  • Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
  • Unlimited write cycles
  • Low-power CMOS
  • Read and write access times of 70ns
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
  • Full ±10% VCC operating range (DS1230Y)
  • Optional ±5% VCC operating range (DS1230AB)
  • Optional industrial temperature range of -40°C to +85°C, designated IND
  • JEDEC standard 28-pin DIP package
  • PowerCap Module (PCM) package
    • Directly surface-mountable module
    • Replaceable snap-on PowerCap provides lithium backup battery
    • Standardized pinout for all nonvolatile SRAM products
    • Detachment feature on PowerCap allows easy removal using a regular screwdriver

應用

  • Battery-backed SRAM applications
  • Data logging systems
  • Embedded systems requiring nonvolatile RAM
  • Industrial automation and control systems
  • Medical devices
  • Gaming devices
  • Security systems
  • Instrumentation and measurement equipment
  • Telecommunications equipment
  • Networking devices

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category ! NVRAM RoHS N
Package / Case EDIP-28 Interface Type Parallel
Memory Size ! 256 kbit Organization 32 k x 8
Data Bus Width 8 bit Access Time 100 ns
Supply Voltage - Max 5.25 V Supply Voltage - Min 4.75 V
Operating Supply Current 85 mA Minimum Operating Temperature 0 C
Maximum Operating Temperature ! + 70 C Series DS1230AB
Brand Analog Devices / Maxim Integrated Height 9.4 mm
Length 39.12 mm Mounting Style Through Hole
Operating Supply Voltage ! 5 V Product Type ! NVRAM
Subcategory Memory & Data Storage Type NVSRAM
Width 18.8 mm Part # Aliases DS1230AB

常見問題解答

What is DS1230AB-100?

The DS1230AB-100 is a 256k non-volatile, static RAM (NVSRAM) memory module manufactured by Maxim Integrated. It combines the functions of a static RAM with the non-volatility of an EEPROM, making it suitable for applications requiring data retention during power loss, such as industrial automation, medical devices, and automotive systems.

How Does DS1230AB-100 Work?

The DS1230AB-100 operates as a non-volatile static RAM, storing data in a static RAM array and using an integrated lithium energy source to retain stored data in the absence of power. It allows users to read and write data to the memory module as with a standard RAM, while ensuring that the data is preserved even during power interruptions.

How Many Pins does DS1230AB-100 have and What are the Functions of the Pinout Configuration?

The DS1230AB-100 is housed in a 32-pin DIP (Dual Inline Package) package. The pinout configuration includes:

  • VCC: Power supply pin.
  • GND: Ground pin.
  • CE: Chip enable pin for read and write operations.
  • WE: Write enable pin for write operations.
  • OE: Output enable pin for read operations.
  • NC: No connect pin.
  • Address Bus (A0-A14): Address inputs for memory access.
  • Data Bus (DQ0-DQ7, DQ8-DQ15): Data input/output pins.
  • VBAT: Battery input for non-volatile energy source.

What are the Pros and Cons of DS1230AB-100?

Pros:

  • Data Retention: Maintains stored data for many years without power, providing non-volatile storage.
  • High Density: Offers 256k of memory in a relatively small package, suitable for storage-intensive applications.
  • No Battery Required during Read/Write: Saves costs on battery replacement as the energy source is only used for data retention.
  • Simple Interface: Utilizes a standard RAM interface for easy integration into existing designs.

Cons:

  • Write Endurance: Limited endurance for write cycles compared to traditional SRAM.
  • Package Size: The 32-pin DIP package may be relatively large for space-constrained designs.

Are There Any Equivalents/Alternatives to DS1230AB-100 for Recommendation?

  • The M48Z02 from STMicroelectronics is a similar 256k NVSRAM with battery backup.
  • Alternatives to the DS1230AB-100 include the FM1608 from Cypress and the BR93H86-W from ROHM.

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