DS1220Y-200

Experience reliable data retention and fast read/write speeds with the DS1220Y-200+ non-volatile SRAM module
3,886 有效庫存

DS1220Y-200

有效庫存3,886

Experience reliable data retention and fast read/write speeds with the DS1220Y-200+ non-volatile SRAM module

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DS1220Y-200 數據表
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詳細說明

The DS1220Y-200+ comes in a 24-pin DIP package, making it suitable for a wide range of applications. Its operating temperature range of -40°C to +85°C allows for flexibility in deployment, whether in industrial environments or consumer electronics. With its robust design and advanced features, this RAM module is a dependable choice for demanding applications that require high performance and data integrity

DS1220Y-200

主要特徵

  • The device is designed for use in industrial automation, medical devices, and automotive applications
  • It can be used in conjunction with other ICs to create more complex systems
  • The DS12Y-200 has a operating temperature range of -40°C to +85°C
  • It also features a unique thermal shutdown circuit that prevents damage from overheating
  • The device is RoHS compliant and meets EU's Directive on the Restriction of Hazardous Substances
  • It has a standard 8-pin SOP package and comes with a comprehensive set of documentation

應用

  • Must-have for communication systems
  • Enhances productivity
  • Reliable non-volatile memory

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Rohs Code No Part Life Cycle Code Transferred
Reach Compliance Code Access Time-Max 200 ns
JESD-30 Code R-PDIP-T24 JESD-609 Code e0
Memory Density 16384 bit Memory IC Type NON-VOLATILE SRAM MODULE
Memory Width 8 Number of Functions 1
Number of Terminals 24 Number of Words 2048 words
Number of Words Code 2000 Operating Mode ! ASYNCHRONOUS
Operating Temperature-Max 70 °C Operating Temperature-Min
Organization 2KX8 Package Body Material PLASTIC/EPOXY
Package Code DIP Package Equivalence Code DIP24,.6
Package Shape RECTANGULAR Package Style IN-LINE
Parallel/Serial PARALLEL Power Supplies ! 5 V
Qualification Status ! Not Qualified Standby Current-Max 0.004 A
Supply Current-Max 0.075 mA Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V Supply Voltage-Nom (Vsup) 5 V
Surface Mount ! NO Technology CMOS
Temperature Grade ! COMMERCIAL Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form ! THROUGH-HOLE Terminal Pitch ! 2.54 mm
Terminal Position DUAL

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 DS1220Y-200 PDF 下載

常見問題解答

What is DS1220Y-200?

The DS1220Y-200 is a 16k Nonvolatile SRAM (NVSRAM) memory chip designed by Maxim Integrated. It combines the high performance of fast static RAM with nonvolatile data retention, making it suitable for applications requiring reliable data storage and retrieval, such as industrial automation, medical devices, and automotive systems.

How Does DS1220Y-200 Work?

The DS1220Y-200 operates by storing data in nonvolatile memory cells, ensuring that the data remains intact even when power is removed. It utilizes a combination of SRAM and EEPROM technologies to achieve fast read and write operations while maintaining nonvolatile data storage. The chip features a battery backup input for additional data protection during power loss.

How Many Pins does DS1220Y-200 have and What are the Functions of the Pinout Configuration?

The DS1220Y-200 is housed in a 24-pin DIP (Dual In-line Package) package. The pinout configuration includes:

  • VCC: Power supply pin.
  • GND: Ground pin.
  • CE: Chip enable input pin.
  • OE: Output enable input pin.
  • WE: Write enable input pin.
  • NC: No connect pin.
  • Addresses (A0-A13): Address inputs for memory addressing.
  • Byte (B1, B2): Data input/output for high and low bytes.
  • VBAT: Battery backup input for nonvolatile data retention.

What are the Pros and Cons of DS1220Y-200?

Pros:

  • Nonvolatile Data Retention: Ensures data integrity during power loss or system shutdown.
  • High Performance: Combines fast SRAM read/write operations with nonvolatile data storage.
  • Battery Backup Input: Allows for external backup power to maintain data integrity.
  • Industrial Temperature Range: Suitable for harsh environmental conditions.
  • Reliable Data Storage: Ideal for critical data logging and storage applications.

Cons:

  • Higher Cost: NVSRAM technology may have a higher cost compared to traditional SRAM or EEPROM chips.
  • External Backup Battery: Requires an external battery for nonvolatile data retention, adding design complexity in some applications.

Are There Any Equivalents/Alternatives to DS1220Y-200 for Recommendation?

  • The M48Z02 from STMicroelectronics is a similar 16k NVSRAM with comparable features.
  • Alternatives to the DS1220Y-200 include the FM1608 from Cypress Semiconductor and the MB85RS16VP from Fujitsu.

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