CY7C1041DV33-10BVXI
Quad flat no-lead package
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CY7C1041DV33-10BVXI 數據表
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詳細說明
In conclusion, the CY7C1041DV33-10BVXI offers a winning combination of speed, capacity, efficiency, and reliability, making it a top choice for demanding applications in various industries. With its advanced features and robust design, this SRAM chip from Cypress Semiconductor delivers superior performance and functionality, helping businesses and consumers alike achieve optimal results in their electronic devices
主要特徵
- This SRAM is highly reliable and efficient
- Suitable for use in automotive applications
- Leverages advanced memory technology
- Operates at a speed of up to 10ns
- Provides high storage density (256K x 16)
- Supports low voltage operation (2.3V-3.6V)
應用
- Great for telecom
- Long-lasting and durable
- Designed for electronics
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Product Category ! | SRAM | RoHS | Details |
Memory Size ! | 4 Mbit | Organization | 256 k x 16 |
Access Time | 10 ns | Interface Type | Parallel |
Supply Voltage - Max | 3.6 V | Supply Voltage - Min | 3 V |
Supply Current - Max | 90 mA | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature ! | + 85 C | Mounting Style | SMD/SMT |
Package / Case | VFBGA-48 | Brand | Infineon Technologies |
Memory Type ! | SDR | Moisture Sensitive | Yes |
Product Type ! | SRAM | Series | CY7C1041DV33 |
Factory Pack Quantity | 480 | Subcategory | Memory & Data Storage |
Type | Asynchronous | Unit Weight | 0.007873 oz |
Specification Comparison
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is CY7C1041DV33-10BVXI?
The CY7C1041DV33-10BVXI is a low-power, high-performance 4Mbit (512K x 8) static random access memory (SRAM) designed by Cypress Semiconductor. It is ideal for applications requiring fast access times, low power consumption, and high reliability, such as battery-powered devices, networking equipment, and embedded systems.
How Does CY7C1041DV33-10BVXI Work?
The CY7C1041DV33-10BVXI operates as a high-speed SRAM with a non-volatile ferroelectric random access memory (F-RAM) cell design. It offers fast access times and low active and standby power, making it suitable for power-sensitive applications. The SRAM features a simple interface for easy integration into various system designs.
How Many Pins does CY7C1041DV33-10BVXI have and What are the Functions of the Pinout Configuration?
The CY7C1041DV33-10BVXI is housed in a 32-pin SOJ (Small Outline J-lead) package. The pinout configuration includes:
- VDD, VSS: Power supply and ground pins, respectively.
- NC: No connect pins.
- WE, OE: Write enable and output enable control pins.
- UB, LB: Upper byte and lower byte data input/output pins.
- Address Pins (A0-A18): Address input pins for memory addressing.
- CE1, CE2: Chip enable control pins for device selection.
What are the Pros and Cons of CY7C1041DV33-10BVXI?
Pros:
- High Performance: Offers fast access times for quick data retrieval.
- Low Power Consumption: Operates with low active and standby power, suitable for battery-powered devices.
- Non-Volatile Memory: Utilizes F-RAM cell design for high reliability and non-volatile data retention.
- Simple Interface: Features a straightforward interface for easy integration into system designs.
- High Density: Provides 4Mbit of memory in a compact package, suitable for space-constrained designs.
Cons:
- Higher Cost: May have a higher cost compared to traditional SRAM technologies due to F-RAM design.
- Package Size: The 32-pin SOJ package may require more space compared to smaller form factors.
Are There Any Equivalents/Alternatives to CY7C1041DV33-10BVXI for Recommendation?
- The FM18W08 from Ramtron (now Cypress Semiconductor) is an alternative F-RAM-based SRAM with comparable features.
- Equivalents to the CY7C1041DV33-10BVXI include the MB8464A from Fujitsu and the AS6C4008 from Alliance Memory.
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