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2SK3475
Channel Transistor
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2SK3475 數據表
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詳細說明
The 2SK3475 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications in power supply circuits, motor control, and other power electronics applications. It is produced by Renesas Electronics Corporation, a leading semiconductor manufacturer.The 2SK3475 features a drain-source voltage (Vds) rating of 500V and a continuous drain current (Id) rating of 2.5A, making it suitable for medium-power applications. It has a low on-state resistance (Rds(on)) of 5.5 ohms, which helps minimize power losses and improve efficiency in switching circuits.The device is housed in a TO-220 package, which provides good thermal performance and ease of mounting on a heatsink. It can operate over a wide temperature range, from -55°C to 150°C, making it suitable for industrial and automotive applications.The 2SK3475 has built-in protection features such as overcurrent and overtemperature protection, which help prevent damage to the device under fault conditions. It also has a fast switching speed and low gate charge, allowing for efficient and reliable operation in high-frequency switching applications.
主要特徵
- N-channel MOSFET
- Low on-resistance
- High voltage capability
- Low input capacitance
- High speed switching
- Suitable for high frequency applications
- Low gate charge
- RoHS compliant
應用
- Switching and amplification in audio equipment
- Signal processing in telecommunication systems
- Power management in automotive electronics
- Industrial control systems
- RF amplification in wireless communication devices
規格
以下是所選零件的基本參數，涉及零件的特性及其所屬類別。
| Rohs Code | Yes | Part Life Cycle Code | Not Recommended |
| Part Package Code | SC-62 | Pin Count ! | 3 |
| Reach Compliance Code | ECCN Code | EAR99 | |
| Configuration | SINGLE | DS Breakdown Voltage-Min | 20 V |
| Drain Current-Max (Abs) (ID) | 1 A | Drain Current-Max (ID) | 1 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-PSSO-F3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 3 W | Power Gain-Min (Gp) | 14.9 dB |
| Qualification Status ! | Not Qualified | Surface Mount ! | YES |
| Terminal Form ! | FLAT | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is 2SK3475?
The 2SK3475 is a silicon N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed, high-voltage switching applications. It is commonly used in power supply, motor control, and audio amplifier circuits where high-performance switching is required.
How Does 2SK3475 Work?
The 2SK3475 operates by controlling the flow of current between the drain and source terminals using an electric field. By varying the voltage on the gate terminal, the MOSFET can modulate the conductivity between the drain and source, making it suitable for high-speed switching applications.
How Many Pins does 2SK3475 have and What are the Functions of the Pinout Configuration?
The 2SK3475 is housed in a TO-220 package. The pinout configuration includes:
- G: Gate terminal for controlling the MOSFET conductivity.
- D: Drain terminal for the output current.
- S: Source terminal for the input or ground connection.
What are the Pros and Cons of 2SK3475?
Pros:
- High-Speed Switching: Suitable for applications requiring rapid on/off switching.
- High-Voltage Capability: Designed to handle high voltage levels, making it suitable for power electronics.
- Low On-Resistance: Enables efficient current flow when the MOSFET is in the conducting state.
- Simple Drive Circuitry: The gate input is voltage-controlled, requiring minimal drive circuit complexity.
Cons:
- Gate Drive Voltage: Requires precise gate drive voltage control for optimal performance.
- Heat Dissipation: May require heatsinking to manage thermal dissipation at high currents.
- Threshold Voltage Variation: MOSFETs can exhibit threshold voltage variations between devices, requiring careful matching in some applications.
Are There Any Equivalents/Alternatives to 2SK3475 for Recommendation?
Equivalents to the 2SK3475 include the IRF740 and IRF840 MOSFETs from Infineon Technologies. Alternatives to the 2SK3475 include the FQP30N06L and FDP7030L MOSFETs from Fairchild Semiconductor.
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