TO-263-3 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
IPB117N20NFD | High-power N-channel MOSFET designed for switching applications | INFINEON | 3~7 Days | 6,298 | ||
SUM85N03-06P | N-Channel MOSFET with 30V Drain-Source Voltage and 175°C Maximum Operating Temperature | VISHAY | 3~7 Days | 6,358 | ||
FDB42AN15A0 | 150V 150W N Channel D2PAK MOSFET | Onsemi | Obsolete | 3~7 Days | 6,059 | |
FQB34N20L | L-type MOSFET with 200V voltage rating and 75MOHM resistance in D2PAK housing | FAIRCHILD | 3~7 Days | 7,992 | ||
FDB44N25 | 250V MOSFET UF 69MOHM D2PAK | FAIRCHILD | 3~7 Days | 4,348 | ||
IRF840AS | N-Channel Power MOSFET with a rating of 8 Amperes and 500 Volts | Vishay | 3~7 Days | 6,446 | ||
IRF644S | MOSFET Transistor, N-Channel, TO-252VAR | Vishay | 3~7 Days | 4,714 | ||
STPSC606G-TR | This product is a 3-pin device with 2 pins and a tab for easy mounting on a circuit board | STMicroelectronics | 3~7 Days | 3,181 | ||
LX8384-00CDD | Microchip Technology LX8384-00CDD product description | MICROSEMI | Discontinued | 3~7 Days | 5,336 | |
SPB11N60C3 | The SPB11N60C3 is a TO-263-3 MOSFET designed to meet ROHS standards | Infineon | NRND | 3~7 Days | 8,378 | |
STB37N60DM2AG | D2PAK-packaged N-channel MOSFET designed for automotive-grade applications, capable of handling high voltages and currents with low on-resistance | STMicroelectronics | Active | 3~7 Days | 6,012 | |
FQB25N33 | Power Field-Effect Transistor, with a 25A I(D) rating, 330V, 0.23ohm, N-Channel Silicon MOSFET, ROHS COMPLIANT, packaged in D2PAK with 8 pins | Onsemi | Obsolete | 3~7 Days | 7,064 | |
IPB200N25N3-G | Offering: IPB200N25N3 G, RoHS Conformant (Ships within 24 hours), Last Production in 2023 | INFINEON | 3~7 Days | 5,052 | ||
SUM40N10-30 | N-channel MOSFET power transistor, SUM40N10-30 | VISHAY SILICONIX | 3~7 Days | 7,862 | ||
DPG60IM300PC | DIODE GEN PURP 300V 60A TO263AA | IXYS | Active | 3~7 Days | 5,929 | |
IPB015N04LG | Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | INFINEON | 3~7 Days | 3,751 | ||
IXFA34N65X3 | TO-263 package N-channel MOSFET with low on-resistance | IXYS | Active | 3~7 Days | 6,102 | |
64-2092PBF | PAK Surface Mount N-Channel 55V 75A (Tc) 170W (Tc) | Infineon | OBSOLETE | 3~7 Days | 9,659 | |
SUB70N06-14 | N-Channel MOSFET Transistor | Vishay | OBSOLETE | 3~7 Days | 6,364 | |
STB25NM50N | 22A, 500V, 0.14ohm N-CHANNEL Si POWER MOSFET D2PAK-3 | Stmicroelectronics | OBSOLETE | 3~7 Days | 8,776 | |
SUB75P05-08 | D2PAK housing for efficient heat dissipation | Vishay | OBSOLETE | 3~7 Days | 7,817 | |
SKB10N60A | 600V 10A IGBT Transistor with Fast NPT Technology | Infineon | OBSOLETE | 3~7 Days | 5,019 | |
MTB30P06V | Single P-Channel Power MOSFET capable of handling -30A at a voltage of -60V with low on-resistance of 80 mOhm | Onsemi | Obsolete | 3~7 Days | 8,750 | |
IXFA16N60P3 | High-voltage N-channel MOSFET transistor with a current rating of 16 amps, packaged in TO-263AA | IXYS | Active | 3~7 Days | 9,034 | |
IXFA10N80P | Power transistor for switching applications with a 2+tab pin configuration | IXYS | Active | 3~7 Days | 7,424 | |
IXFA26N50P3 | Description: IXFA26N50P3 - Power MOSFET designed with an integrated fast diode for efficient operation | IXYS | Active | 3~7 Days | 7,380 | |
FQB7P20TM | MOSFET 200V P-Channel QFET | Onsemi | Obsolete | 3~7 Days | 8,843 | |
FQB1P50 | P-Channel Power MOSFET with QFET technology, capable of conducting up to -1.5A at -500V with a resistance of 10.5 ohms, housed in a D2PAK package | Onsemi | Obsolete | 3~7 Days | 7,862 | |
IXGA30N60C3C1 | Transistor Insulated Gate Bipolar Transistor Chip | IXYS | Obsolete | 3~7 Days | 8,918 | |
IRG4BC30S-S | In a D2-Pak package, the IRG4BC30S-S is a 600V DC-1 kHz (Standard) Discrete IGBT | Infineon Technologies | OBSOLETE | 3~7 Days | 7,541 | |
IRG4BC20KD-S | Features 3 Pins with 2 Additional Tabs for Secure Connection | Infineon Technologies | OBSOLETE | 3~7 Days | 6,729 | |
SGB10N60A | TO-263 IGBT SGB10N60A product information | Infineon | 3~7 Days | 3,736 | ||
SKB15N60 | There are 1000 units in the manufacturing packaging quantity of SKB15N60 | Infineon | OBSOLETE | 3~7 Days | 6,423 | |
MBRD10150CT | Product MBRD10150CT features 150 volts and 5 amps with a forward voltage drop of 920mV at 5 amps | Littelfuse | Active | 3~7 Days | 9,919 | |
IXTA4N70X2 | 700 volts, 4 amps, 80 watts, with a resistance of 850 milliohms at 2 amps and 10 volts, dropping to 4 | IXYS | Active | 3~7 Days | 5,169 | |
IRF9540S | MOSFET RECOMMENDED ALT 844-IRF9540SPBF | Vishay | Obsolete | 3~7 Days | 9,873 | |
STB270N4F3 | channel Power MOSFET | STMicroelectronics | Active | 3~7 Days | 7,800 | |
STB45NF06T4 | MOSFET N-Ch, 60V-0.022ohms 38A | STMicroelectronics | Active | 3~7 Days | 6,936 | |
MBRB41H100CTT4G | Schottky Barrier Rectifier capable of handling 40 A at 100 V | Onsemi | Obsolete | 3~7 Days | 8,625 | |
MIC29300-5.0WU | LDO regulators designed to provide stable voltage output up to 3.0A | Microchip | ACTIVE | 3~7 Days | 7,429 |
附加包裝/箱