TO-247-3 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
IRG7PH35UD1PBF | 1200V Trench IGBT for Induction Cooking | Infineon Technologies | OBSOLETE | 3~7 Days | 9,083 | |
RGS80TSX2DHRC11 | The RGS80TSX2DHRC11 boasts an IGBT designed for automotive applications, certified to meet AEC-Q101 standards | Rohm Semiconductor | ACTIVE | 3~7 Days | 6,363 | |
IKW75N60T | IGBT Transistors LOW LOSS DuoPack 600V 75A | Infineon | 3~7 Days | 5,382 | ||
IKW50N60T | IGBT Transistors LOW LOSS DuoPack 600V 50A | Infineon | 3~7 Days | 3,633 | ||
HGTG20N60A4D | IGBT Transistors 600V | Onsemi | 3~7 Days | 2,258 | ||
APT70GR120B2 | Trans IGBT Chip N-CH 1200V 160A 961W 3-Pin(3+Tab) T-MAX Tube | Microchip Technology | ACTIVE | 3~7 Days | 9,386 | |
APT45GR65B | Trans IGBT Chip APT45GR65B operates as an N-channel device at 650V, featuring a TO-247 package and a current handling capacity of 118A | Microchip | 3~7 Days | 5,109 | ||
APT25GT120BRDQ2G | Trans IGBT Chip N-CH 1200V 54A 347W 3-Pin(3+Tab) TO-247 Tube | Microchip Technology | ACTIVE | 3~7 Days | 5,019 | |
FGH40N60SFDTU_F085 | TO-247-3 IGBTs ROHS | Onsemi | 3~7 Days | 3,451 | ||
IPW65R110CFD | Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-247 Tube | Infineon Technologies | OBSOLETE | 3~7 Days | 9,306 | |
APT80GA90B | APT80GA90B: 625 Watts, 145 Amperes, 900 Volts, PT (Punch-Through) TO-247 IGBTs ROHS | Microchip | 3~7 Days | 5,844 | ||
IRGP6640DPBF | Trans IGBT Chip N-CH 600V 53A 200W 3-Pin(3+Tab) TO-247AC Tube | Infineon Technologies | OBSOLETE | 3~7 Days | 6,106 | |
IRG7PH35UPBF | 0603-size Thermistor NTC with 10kΩ resistance and 3380K temperature rating | International Rectifier | ACTIVE | 3~7 Days | 7,320 | |
IRGP6660DPBF | IGBT 600V 95A 330W TO247AC | Infineon Technologies | OBSOLETE | 3~7 Days | 7,681 | |
IXA45IF1200HB | N-Channel IGBT Transistor | IXYS | Active | 3~7 Days | 5,011 | |
SCT3040KLGC11 | Power Field-Effect Transistor, 55A Drain Current, 1200V Voltage Rating, 0 | Rohm Semiconductor | ACTIVE | 3~7 Days | 8,737 | |
SCT3022ALGC11 | 339W Power Dissipation | Rohm Semiconductor | ACTIVE | 3~7 Days | 9,822 | |
RGS80TS65DHRC11 | High-Power IGBT Transistors | Rohm Semiconductor | ACTIVE | 3~7 Days | 6,538 | |
STPSC40065CWY | Diode Schottky SiC 650V 40A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube | STMicroelectronics | ACTIVE | 3~7 Days | 5,366 | |
FGY40T120SMD | IGBT Transistors 1200 V, 40 A Field Stop Trench IGBT | Onsemi | 3~7 Days | 5,259 | ||
RJH60F5DPQ-A0#T0 | IGBT Transistors for RJH60F5DPQ-A0#T0 | Renesas | 3~7 Days | 2,595 | ||
SGW15N60 | IGBT transistors with fast switching capability | Infineon | OBSOLETE | 3~7 Days | 8,381 | |
IXTH150N17T | The IXTH150N17T: A N-Channel device with a voltage rating of 175V | Ixys | 3~7 Days | 7,834 | ||
FDH15N50 | UltraFET N-Channel MOSFET rated at 15A and 500V | Onsemi | OBSOLETE | 3~7 Days | 7,322 | |
DSSK60-02A | Schottky rectifying diode | Ixys | ACTIVE | 3~7 Days | 7,999 | |
DSSK30-01A | Diode with Schottky rectifying technology | Ixys | 3~7 Days | 7,746 | ||
DSSK80-006B | 60V 40A TO247AD SCHOTTKY DIODE THT | Ixys | ACTIVE | 3~7 Days | 6,078 | |
C2M0160120D | Power semiconductor device with MOSFET technology, 1200V rating, and 160 milliohm RDS ON | Wolfspeed | NRND | 3~7 Days | 6,411 | |
IXYH50N65C3D1 | XPT-GenX3 IGBT Transistors | Ixys | 3~7 Days | 7,992 | ||
APT30GT60BRDG | IGBT-COMBI 600V 30A TO-247 RoHS | Microchip | 3~7 Days | 3,758 | ||
TIP34C | Bipolar Transistors - BJT PNP Gen Pur Power | Stmicroelectronics | 3~7 Days | 2,027 | ||
RFG70N06 | N-Channel Power MOSFET TO-247 | Onsemi | OBSOLETE | 3~7 Days | 7,480 | |
IXFH66N20Q | IXFH66N20Q MOSFET transistor in TO-247AD package | Ixys | 3~7 Days | 2,286 | ||
IRFP264 | MOSFET Transistor, N-Channel, TO-247AC | Ixys | 3~7 Days | 5,602 | ||
IRFP460 | Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Stmicroelectronics | 3~7 Days | 2,954 | ||
IRFP4332 | IRFP4332 is a power MOSFET chip designed for high frequency applications. | Infineon | Restricted Availability | 3~7 Days | 5,632 | |
IKW30N60DTP | IGBT Transistors INDUSTRY 14 | Infineon Technologies | ACTIVE | 3~7 Days | 9,484 | |
IPW60R070CFD7XKSA1 | MOSFET HIGH POWER_NEW | Infineon | Active | 3~7 Days | 5,636 | |
IPW60R075CPAFKSA1 | MOSFET AUTOMOTIVE | Infineon | Active | 3~7 Days | 8,220 | |
IPW60R280E6FKSA1 | MOSFET LOW POWER_LEGACY | Infineon | Obsolete | 3~7 Days | 6,026 |
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