TO-220AB 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
SUP65P06-20 | P-Channel MOSFET with a 60V Voltage Rating and 65A Current Capacity in a TO-220AB Package | Vishay | 3~7 Days | 5,259 | ||
BUZ73L | High-current 200V Silicon Transistor | INFINEON | 3~7 Days | 7,959 | ||
MTP2P50EG | Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220, TO-220 3 LEAD STANDARD, 50-TUBE | Onsemi | 3~7 Days | 200 | ||
NTP18N06 | 15A, 60V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | Onsemi | 3~7 Days | 6,132 | ||
MTP23P06V | Power MOSFET 23 Amps, 60 Volts, TO-220 3 LEAD STANDARD, 50-TUBE | Onsemi | 3~7 Days | 3,145 | ||
NDP7060 | N-Channel Enhancement Mode Field Effect Transistor 60V, 75A, 13mΩ, 800-TUBE | Onsemi | 3~7 Days | 5,295 | ||
MBR2545CT | DIODE ARRAY SCHOTTKY 45V TO220AB | Onsemi | Discontinued | 3~7 Days | 6,343 | |
IRL640A | Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 18 A, 180 mΩ, TO-220, 1000-TUBE | Onsemi | 3~7 Days | 4,309 | ||
FQP3P20 | Power MOSFET, P-Channel, QFET®, -200 V, -2.8 A, 2.7 Ω, TO-220, 1000-TUBE | Onsemi | 3~7 Days | 4,494 | ||
FQP32N20C | Power MOSFET, N-Channel, QFET®, 200 V, 28 A, 82 mΩ, TO-220, 1000-TUBE | Onsemi | 3~7 Days | 3,487 | ||
FQP8P10 | Power MOSFET, P-Channel, QFET®, -100 V, -8 A, 530 mΩ, TO-220, 1000-TUBE | Onsemi | Obsolete | 3~7 Days | 3,519 | |
FQP85N06 | Power MOSFET, N Channel, 60 V, 85 A, 0.01 ohm, TO-220, Through Hole | Onsemi | Active | 3~7 Days | 3,406 | |
FQP13N10L | Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220, 1000-TUBE | Onsemi | 3~7 Days | 3,151 | ||
FQP34N20 | Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220, 1000-TUBE | Onsemi | 3~7 Days | 4,894 | ||
FQP20N06 | Power MOSFET, N-Channel, QFET®, 60 V, 20 A, 60 mΩ, TO-220, 1000-TUBE | Onsemi | 3~7 Days | 3,116 | ||
FDPF20N50 | Power MOSFET, N-Channel, UniFETTM, 500 V, 20 A, 230 mΩ, TO-220F, 1000-TUBE | Onsemi | 3~7 Days | 5,558 | ||
FDP8880 | N-Channel PowerTrench® MOSFET 30V, 54A, 11.6mΩ, 800-TUBE | Onsemi | 3~7 Days | 5,244 | ||
IRF9Z24 | Power MOSFET designed for applications requiring high efficiency and reliability | Vishay | 3~7 Days | 7,860 | ||
T2050H-6T | 20 A - 600 V - 150 °C H-series Triacs in TO-220AB | STMicroelectronics | 3~7 Days | 6,045 | ||
FERD30H100STS | FERD30H100STS Overview: The FERD30H100STS is a rectifying diode designed to handle currents up to 30A at voltages of 100V | STMicroelectronics | 3~7 Days | 3,864 | ||
BTB24-800BWRG | Gate Trigger 1.3V 50mA | STMicroelectronics | 3~7 Days | 4,458 | ||
SPP80P06P | Get your hands on: High-current 80A P-type MOSFET for automotive use | INFINEON | Discontinued | 3~7 Days | 6,147 | |
SPP06N80C3 | The MOSFET has a maximum power dissipation of 83W and a low on-resistance of 900mΩ at 10V and 3.8A | INFINEON | Discontinued | 3~7 Days | 5,499 | |
RFP15P05 | RFP15P05: An advanced P-channel power MOSFET engineered to handle currents up to 15A and voltages of 50V with ease | Onsemi | 3~7 Days | 5,332 | ||
RFP70N03 | High-Power N-Channel Silicon MOSFET rated for 70 Amperes and 30 Volts, with a Low On-Resistance of 0.01ohm, packaged in TO-220AB | Onsemi | 3~7 Days | 7,121 | ||
PHP101NQ04T | TrenchMOS power transistor | NXP | 3~7 Days | 3,568 | ||
IPP60R125CP | TO-220AB N-CHANNEL Silicon Power MOSFET rated at 25A and 600V | INFINEON | 3~7 Days | 5,139 | ||
BUK101-50GL | Field-Effect Transistor for Power Applications | NXP | 3~7 Days | 7,396 | ||
BTS129 | The BTS129 is a N-channel MOSFET with a maximum voltage of 60V and can carry a current up to 6.7A in a TO220-3 package | INFINEON | 3~7 Days | 5,079 | ||
BTS112A | BTS112A - Power Field-Effect Transistor, 12A, 60V, 0.15ohm, N-Channel, MOSFET | INFINEON | Discontinued | 3~7 Days | 4,657 | |
32CTQ030 | 30V Schottky rectifying diode with Through-Hole Technology, 30A current rating, TO220AB package, comes in a tube, has a reverse current of 1.75mA | VISHAY | 3~7 Days | 5,020 | ||
S6025LTP | Thyristor SCR 600V 25A TO220 Isolated Package | LITTELFUSE | 3~7 Days | 3,653 | ||
MTP20N15E | Power MOSFET with a voltage rating of 150V, a current rating of 20A, and a resistance of 130 milliohms in a single N-Channel TO-220 package | Onsemi | 3~7 Days | 5,931 | ||
SPP04N80C3 | Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | INFINEON | 3~7 Days | 5,082 | ||
AVS12CB | Description of AVS12CB: Auto voltage switch for SMPS up to 500W | STMicroelectronics | Active | 3~7 Days | 7,097 | |
SFP9530 | Power Field-Effect Transistor, 10.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel | Onsemi | Obsolete | 3~7 Days | 6,517 | |
2N6486 | Bipolar power transistor for amplification or switching purposes | CENTRAL | 3~7 Days | 5,413 | ||
2N6290 | Overview of Product 2N6290 - Bipolar Transistors - BJT | CENTRAL | 3~7 Days | 3,015 | ||
BTS131 | Power Field-Effect Transistor, 25A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | INFINEON | 3~7 Days | 3,900 | ||
BUL39D | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMicroelectronics | 3~7 Days | 7,963 |
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