TO-220 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
TIP32C | Bipolar Transistors - BJT TO220,PNP,MedPwr,GenPur,Plasticleads | Onsemi | 3~7 Days | 5,019 | ||
STP3N150 | Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-220 Tube | Stmicroelectronics | 3~7 Days | 2,661 | ||
SUV90N06-05 | Vishay's SUV90N06-05 is no longer in production and has no replacement available | Vishay | 3~7 Days | 7,516 | ||
2SB633 | 6A, 85V Bipolar Transistor | Sanyo Electric Co Ltd | 3~7 Days | 6,512 | ||
2SA1606 | 2SA1606 BiPolar Power Transistor | New Jersey Semiconductor Products Inc | 3~7 Days | 4,592 | ||
2SK3053 | Low on-state resistance of 0.07 ohms for efficient power transfer | Renesas | 3~7 Days | 5,011 | ||
2SK1412 | This device is a Power Field-Effect Transistor with a Drain Current of 0 | Onsemi | 3~7 Days | 4,817 | ||
2SK1762 | Power Field-Effect Transistor, N-Channel type with 0.35ohm resistance, Metal-oxide Semiconductor FET in TO-220FM package with 3 pins | Renesas | 3~7 Days | 5,577 | ||
2SC3944 | 1-Element NPN Power Bipolar Transistor rated for 1A Collector Current and 150V Collector-Emitter Breakdown Voltage, TO-220AB Package | Panasonic Electronic Components | 3~7 Days | 5,797 | ||
IRFI1010N | The IRFI1010N is an N-Channel Power Field-Effect Transistor crafted from Silicon technology | INFINEON | 3~7 Days | 7,202 | ||
IRFB3307Z | The IRFB3307Z is a high-power MOSFET transistor designed for industrial applications. | INFINEON | Active | 3~7 Days | 7,218 | |
IRFIZ24N | Power Field-Effect Transistor with 14A I(D) and 55V | INFINEON | 3~7 Days | 3,622 | ||
L7820CV | Linear Voltage Regulators 20V 1.0A Positive | Stmicroelectronics | 3~7 Days | 150 | ||
LM2575HVT-5 | LM2575HVT-5 is a high voltage step-down switching regulator with 5V output voltage. | Texas Instruments | 3~7 Days | 3,002 | ||
BUZ31L | BUZ31L is a N-channel MOSFET capable of handling up to 200 volts and 13.5 amps, housed in a TO220-3 package | INFINEON | 3~7 Days | 5,673 | ||
2SD2395 | Bipolar transistors | TOSHIBA | 3~7 Days | 7,377 | ||
2SA1306B | PNP Bipolar Junction Transistor, 200V Breakdown Voltage, 1.5A Collector Current, TO-220VAR Package | TOSHIBA | 3~7 Days | 7,983 | ||
SUP60N06-18 | N-type power MOSFET with a current rating of 60 amperes and a voltage rating of 60 volts, featuring a low resistance of 0 | VISHAY | 3~7 Days | 5,304 | ||
IRFB52N15 | The IRFB52N15 is a power MOSFET transistor with a voltage rating of 150V and a current rating of 52A. | INFINEON | 3~7 Days | 5,428 | ||
2N03L04 | 2N03L04 is a power MOSFET transistor chip used for high-power applications. | MOTOROLA | 3~7 Days | 4,400 | ||
2SD478 | 2SD478 is a silicon NPN epitaxial transistor for general purpose amplifier applications. | TOSHIBA | 3~7 Days | 4,011 | ||
SUP70N03 | SUP70N03 is a power MOSFET chip with high performance and efficiency. | VISHAY | 3~7 Days | 5,238 | ||
2SB1018 | BIP General Purpose Power Transistor | TOSHIBA | 3~7 Days | 7,702 | ||
SUP70N06 | SUP70N06 is a N-channel MOSFET power transistor with a voltage rating of 60V and current rating of 70A. | VISHAY | 3~7 Days | 3,361 | ||
2N6042 | TO-220AB Packaged Darlington Transistor: This product is a Darlington configuration transistor | Onsemi | Active | 3~7 Days | 7,808 | |
2SK2255 | 2SK2255 is a high-power N-channel MOSFET transistor used in various electronic applications. | FUJITSU | 3~7 Days | 5,959 | ||
2SK2056 | Single-element Power FET suitable for high-voltage applications | PANASONIC | 3~7 Days | 7,742 | ||
2SK3313 | Power MOSFET N-Channel Transistor 12A 500V 0.62ohm Lead-Free | TOSHIBA | 3~7 Days | 5,807 | ||
TOP202 | TOP202 chip is a power controller with integrated PWM controller suitable for offline power supplies. | Power Integrations | 3~7 Days | 3,829 | ||
KSA940 | PNP Bipolar Transistors - BJT Epitaxial Sil | Onsemi | Discontinued | 3~7 Days | 7,220 | |
AN7915T | AN7915T is a 15V fixed negative standard regulator with bipolar characteristics, designed in a PSFM3 package with a TO-220AB form factor and 3 pins | SAMSUNG | 3~7 Days | 6,941 | ||
11N60S5 | 11N60S5 chip is a power MOSFET transistor designed for high-performance applications. | INFINEON | 3~7 Days | 4,071 | ||
2SA815 | 2SA815 is a PNP silicon transistor used for amplification and switching applications. | FAIRCHILD | 3~7 Days | 5,933 | ||
2SA1659 | 2SA1659 is a high-speed switching transistor manufactured by Toshiba. | KEC | 3~7 Days | 4,036 | ||
IRF532 | TO-220AB Package 79W MOSFET | INFINEON | 3~7 Days | 6,092 | ||
2SA1328 | 2SA1328: Power transistor with a current rating of 12A and a voltage tolerance of 50V, featuring a PNP silicon design in TO-220AB package | TOSHIBA | 3~7 Days | 4,929 | ||
BUK455-600B | Power Transistor | NXP | 3~7 Days | 3,089 | ||
2SK2723 | Power Field-Effect Transistor | NEC | 3~7 Days | 7,143 | ||
2SK2985 | MOSFET 220NIS2 U-TASEN is discontinued as of 03-10 and phased out by 05-07, now obsolete as of 06-10 | TOSHIBA | 3~7 Days | 6,116 | ||
2SB718 | 2SB718 is a silicon PNP epitaxial transistor for audio amplifier applications. | HITACHI | 3~7 Days | 5,453 |
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