TFBGA-200 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
K4F8E304HB-MGCJ | High-performance memory module | Samsung Artik | 3~7 Days | 6,723 | ||
MT53E1536M32D4DE-046 AAT:B | Mobile LPDDR4 SDRAM DRAM Chip | Micron Technology | ACTIVE | 3~7 Days | 6,480 | |
MT53E2G32D4DE-046 WT:C | Low-power LPDDR4 technology | Micron Technology | ACTIVE | 3~7 Days | 7,415 | |
MT53E512M32D1ZW-046BAUT:B | Next-generation DRAM technology with advanced power managemen | Micron Technology | 3~7 Days | 2,078 | ||
MT53E1G32D2FW-046 WT:B | DRAM Chip Mobile LPDDR4 SDRAM 32Gbit 1Gx32 1.1V/1.8V | Micron Technology | ACTIVE | 3~7 Days | 8,524 | |
IS43LQ32256A-062BLI | 1.1V/1.8V DRAM Chip 8Gbit 256Mx32 Mobile LPDDR4 SDRAM | Issi, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 7,981 | |
MT53E512M32D1ZW-046 IT:B | DRAM, LPDDR4, 16 Gbit | Micron Technology | ACTIVE | 3~7 Days | 8,725 | |
MT53E512M32D1ZW-046 WT:B | DDR SDRAM ROHS TFBGA-200 MT53E512M32D1ZW-046 WT:B | Micron Technology | ACTIVE | 3~7 Days | 7,408 | |
MT53E1G32D2FW-046 AAT:B | 32 Gigabyte LPDDR4 DRAM Chip | Micron Technology | ACTIVE | 3~7 Days | 5,430 | |
MT53E1G32D2FW-046 IT:B | High-density Low-power RAM Component | Micron Technology | ACTIVE | 3~7 Days | 8,711 | |
MT53E1G32D2FW-046 AIT:B | Mobile DRAM Chip | Micron Technology | ACTIVE | 3~7 Days | 7,232 | |
MT53E512M16D1FW-046 AAT:D | DRAM LPDDR4 8G 512MX16 FBGA | Micron Technology | 3~7 Days | 7,431 | ||
MT53E2G32D4DE-046 AAT:A | LPDDR4/LPDDR4X SDRAM Automotive AEC-Q100 | Micron Technology | 3~7 Days | 2,249 | ||
MT53E1536M32D4DE-046 AIT:B | DRAM LPDDR4 48G 1.5GX32 FBGA QDP | Micron Technology | ACTIVE | 3~7 Days | 5,108 | |
MT53E1536M32D4DE-046 AAT:C | DRAM Chip Mobile LPDDR4 SDRAM 48Gbit 1536Mx32 Automotive AEC-Q100 200-Pin TFBGA | Micron Technology | 3~7 Days | 5,222 | ||
MT53E512M32D1ZW-046 IT:B TR | DRAM Chip Mobile LPDDR4 SDRAM 16Gbit 512Mx32 1.1V/1.8V 200-Pin TFBGA T/R/Tray | Micron Technology Inc. | ACTIVE | 3~7 Days | 8,359 |
附加包裝/箱