SOT343 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
ATF-58143 | ATF58143 featuring 30.5 dBm OIP3 and low noise in compact SC-70 package | Broadcom | 3~7 Days | 6,641 | ||
BFP843 | RF Bipolar Transistor for Small Signal Amplification | INFINEON | 3~7 Days | 5,281 | ||
EM-1781-T5 | Secure and efficient for seamless data transfe | AKM | 3~7 Days | 6,988 | ||
ATF-35143 | ATF-35143: RF Small Signal N-Channel Field-Effect Transistor | Broadcom Limited | 3~7 Days | 6,231 | ||
XC6215B282NR | 2.8V fixed positive LDO ideal for battery-powered devices | TOREX | 3~7 Days | 6,399 | ||
CFH400 | 1-Element S Band Silicon N-Channel | TRIQUINT | 3~7 Days | 3,513 | ||
BFP183W | RF Small Signal Bipolar Transistor | INFINEON | NRND | 3~7 Days | 4,551 | |
BFP420E6327 | NPN RF transistor for automotive applications | INFINEON | Discontinued | 3~7 Days | 6,107 | |
BCR410W | Intelligent battery charging and discharging control for extended battery lif | INFINEON | NRND | 3~7 Days | 5,417 | |
SPF-5043Z | SOT-343 RF amplifiers | RFMD | 3~7 Days | 6,604 | ||
RB481K | Detailed Specifications for RB481K Schottky Diodes and Rectifiers | ROHM | 3~7 Days | 4,297 | ||
BFP196W | Transistor BFP196W from Infineon | INFINEON | NRND | 3~7 Days | 5,073 | |
BAS40-07W | Ultra-small signal diode for space-constrained design | INFINEON | NRND | 3~7 Days | 5,989 | |
BGA427 | High Power Output | INFINEON | 3~7 Days | 5,271 | ||
BGA614 | SOT-343 Package Type | INFINEON | 3~7 Days | 7,268 | ||
BFU710F | Silicon Germanium RF Transistor NPN Wideband | NXP | 3~7 Days | 7,717 | ||
BFU690F | Wideband NPN Transistor for Radio Frequency Use | NXP | 3~7 Days | 5,475 | ||
BFU610F | NPN Wideband Silicon RF Transistor for high-frequency applications | NXP | 3~7 Days | 7,184 | ||
BCR400W | 343 Analog Circuit, Bipolar, 1 Function, PDSO4, 4 Pin | INFINEON | 3~7 Days | 7,147 | ||
BFP193 | RF Bipolar Transistors - BFP193 Product Description | INFINEON | Active | 3~7 Days | 7,435 | |
BFP460 | Bipolar transistors - BJT (BFP460) | INFINEON | 3~7 Days | 6,355 | ||
ATF35143 | ATF-35143: RF Small Signal N-Channel Field-Effect Transistor | AGILENT | 3~7 Days | 7,948 | ||
DA4X108K0R | 2 Element Rectifier Diode, 0.2A Current, 300V V(RRM) Rating, HALOGEN FREE | PANASONIC | 3~7 Days | 7,931 | ||
ATF58143 | ATF58143 featuring 30.5 dBm OIP3 and low noise in compact SC-70 package | AVAGO | 3~7 Days | 7,888 | ||
HW-105A | Device for converting signals | TOSHIBA | 3~7 Days | 5,290 | ||
2SC5088 | ic 1-element ultra high frequency band | TOSHIBA | Active | 3~7 Days | 5,131 | |
ADA-4543 | Low Power Amplification for Broadband RF/Microwave Applications | AVAGO | 3~7 Days | 3,370 | ||
BF5030 | BF5030, a N-Channel Silicon Metal-oxide Semiconductor FET, is engineered for small signal functions with a current handling capacity of 0 | INFINEON | 3~7 Days | 6,193 | ||
HW108A | Ultra-sensitive Hall sensor | AKM | 3~7 Days | 3,257 | ||
BF1009SW | Ultra High Frequency Band | INFINEON | 3~7 Days | 5,522 | ||
MGA71543 | The MGA-71543 chip is a high-gain, low-noise amplifier used in various applications, including wireless communications and instrumentation | AVAGO | 3~7 Days | 4,974 | ||
NCP583 | ON Semiconductor Low Dropout Regulator with Low Input Voltage | Onsemi | 3~7 Days | 4,963 | ||
1SV312 | 4-Pin PIN Diode in USQ Package, Silicon Semiconductor, 1-2U1A Rating | TOSHIBA | 3~7 Days | 5,471 | ||
1SS384 | SIGNAL DIODE, USQ, 1-2U1A | TOSHIBA | 3~7 Days | 6,116 | ||
NE3508M04 | low noise RF transistor | NEC | 3~7 Days | 3,309 | ||
EM-1781 | SMD-4P Hall Sensor ROHS | AKM | 3~7 Days | 4,365 | ||
MT4S300U | Small-Signal Radio Frequency Bipolar Transistor SiGe HBT (MT4S300U) | Toshiba Semiconductor And Storage | 3~7 Days | 7,818 | ||
RB480K | Rectifier Diode, | ROHM | 3~7 Days | 3,274 | ||
3SK296 | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, CMPAK-4 | HITACHI | 3~7 Days | 3,994 | ||
NE34018 | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4 | NEC | 3~7 Days | 4,641 |
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