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FBGA-84 相關產品
| 零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|
| MT47H64M16HR-3 IT:H | High-speed 1Gbit Memory Device with 450 ps Timing | Micron Technology | 3~7 Days | 4,481 | ||
| K4T1G164QQ-HCE6 | Ultra-fast data transmission for seamless device operation | SAMSUNG | Discontinued | 3~7 Days | 3,956 | |
| H5PS1G63EFR | Featuring advanced DDR2 technology, the H5PS1G63EFR chip supports intense computational needs | HYNIX | 3~7 Days | 6,184 | ||
| MT47H64M16HR-25:H | 400MHz operating frequency | Micron Technology | 3~7 Days | 6,036 | ||
| MT47H64M16HR-25E IT:H | 1Gbit DDR2 SDRAM Chip | Micron Technology | OBSOLETE | 3~7 Days | 7,172 | |
| MT47H64M16HR-25E:H | Advanced memory solution for data-intensive industries, featuring advanced error detection and correction | Micron Technology | OBSOLETE | 3~7 Days | 5,429 | |
| K4T1G164QF-BCF7 | High density CMOS technology for improved performance | SAMSUNG | 3~7 Days | 3,335 | ||
| MT47H64M16HR-3:H | DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA T/R/Tray DRAM Chip | Micron Technology | OBSOLETE | 3~7 Days | 3,883 | |
| MT47H64M16HR-3IT | Advanced Integrated Circuit, offering 1 gigabit capacity for parallel data processing | Micron | 3~7 Days | 4,403 | ||
| MT47H32M16NF-25E IT:H | 32 Meg x 16 DDR DRAM | Micron Technology | 3~7 Days | 7,667 | ||
| MT47H128M16RT-25E:C | Storage conditions: -25 to 85 degrees | Micron Technology | ACTIVE | 3~7 Days | 6,169 | |
| MT47H64M16NF-25E AIT:M | The MT47H64M16NF-25E AIT:M offers fast data transfer rates and reliable performance." | Micron Technology | Active | 3~7 Days | 7,760 | |
| K4T1G164QQ-HCF7 | CMOS PBGA84 DDR memory module with 64MX16 configuration | SAMSUNG | 3~7 Days | 4,438 | ||
| K4T1G164QQ-HCE7 | High-speed memory | SAMSUNG | 3~7 Days | 3,729 | ||
| IS43DR16640A-3DBLI | High-density DRAM chip with 1Gb capacity | ISSI | 3~7 Days | 6,330 | ||
| MT47H64M16NF-25E IT:M TR | DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA T/R | Micron Technology | 3~7 Days | 3,146 | ||
| W971GG6JB-25I | This product is ROHS compliant, ensuring that it meets the environmental standards for hazardous substances | WINBOND | 3~7 Days | 6,541 | ||
| MT47H32M16HR-3 IT:F | Exclusively for OEMs and CMs | MICRON | OBSOLETE | 3~7 Days | 5,078 | |
| H5PS5162GFR-S5C | DDR DRAM 32MX16 0.4NS CMOS PBGA84 | HYNIX | 3~7 Days | 7,980 | ||
| MT47H128M16RT-25E IT:C | The MTHRT-E IT:C DDRSDRAM chip by Micron is a high-performance memory solution for demanding applications | Micron Technology | ACTIVE | 3~7 Days | 6,022 | |
| MT47H32M16NF-25E:H | DRAM DDR2 512M 32MX16 FBGA | Micron Technology | ACTIVE | 3~7 Days | 7,472 | |
| MT47H128M16HG-3:A | CMOS DDR DRAM, 128MX16, 0.45ns, PBGA84, FBGA-84, ROHS COMPLIANT, 11.50 X 14 MM | Micron Technology | ACTIVE | 3~7 Days | 9,901 | |
| MT47H64M16HR-25E(H) | Advanced memory solution for data-intensive industries, featuring advanced error detection and correction | Micron Technology | 3~7 Days | 4,120 | ||
| MT47H128M16RT-25EIT:C | The MTHRT-E IT:C DDRSDRAM chip by Micron is a high-performance memory solution for demanding applications | Micron | 3~7 Days | 3,143 | ||
| MT47H64M16NF-25EAIT:M | The MT47H64M16NF-25E AIT:M offers fast data transfer rates and reliable performance." | Micron Technology | 3~7 Days | 4,372 | ||
| MT47H64M16NF-25E IT:M | 64 megabytes by 16 bits configuration | Micron Technology | ACTIVE | 3~7 Days | 8,701 | |
| MT47H64M16NF-25E:M | Mx FBGA design provides reliable data transfer and storag | Micron Technology | ACTIVE | 3~7 Days | 7,955 | |
| AS4C32M16D2C-25BIN | Advanced memory technology for next-generation syste | Alliance Memory | 3~7 Days | 2,452 | ||
| AS4C64M16D2-25BIN | AS4C64M16D2-25BIN is a high performance DDR2 SDRAM chip with a capacity of 1Gbit and a memory organization of 64Mx16 | Alliance | OBSOLETE | 3~7 Days | 5,385 | |
| S29WS064RABBHI000 | High-capacity storage for your dat | Infineon | 3~7 Days | 5,906 | ||
| MT47H64M16NF-25E AAT:M | -40 105/t/t/t/t/t/t/t/t/t/t/t/t/t/t/t/t/t | Micron Technology | ACTIVE | 3~7 Days | 9,146 | |
| AS4C128M16MD2A-25BIN | Durable and efficient DRAM solution for harsh environments | Alliance Memory | 3~7 Days | 7,982 | ||
| AS4C32M16D2-25BCN | Double Data Rate 2 technology with 512MB capacity | Alliance Memory | End Of Life | 3~7 Days | 5,747 | |
| AS4C16M16D2-25BCN | High-performance DDR SDRAM module for robust application | Alliance Memory | 3~7 Days | 3,268 | ||
| MT47H32M16NF-25E AAT:H TR | Advanced technology and high-speed data transfer for efficient processin | Micron Technology | 3~7 Days | 6,728 | ||
| AS4C64M16D2A-25BANTR | Robust and scalable solution for industrial, automotive, and medical device industrie | Alliance Memory | 3~7 Days | 7,478 | ||
| AS4C16M16D2-25BINTR | AS4C16M16D2-25BINTR is a TFBGA-84(8x12.5) SDRAM compliant with ROHS standards | Alliance Memory, Inc. | ACTIVE | 3~7 Days | 5,160 | |
| AS4C64M16D2-25BCN | This AS4C64M16 component features a 64 M x 16 memory configuration in an FBGA-84 package | Alliance | Obsolete | 3~7 Days | 9,078 | |
| V59C1G01168QBJ25 | This VCBJ memory chip boasts an impressive storage capacity of b, making it an essential component for any computing devic | PROMOS | 3~7 Days | 3,048 | ||
| AS4C64M16D2A-25BIN | C64M16D2A-25BIN, DRAM DDR2, 1G, 64M x 16, 1.8V, 96-ball BGA, 400 MHz, (A-die), Industrial Temp - Tray | Alliance | ACTIVE | 3~7 Days | 5,349 |
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