48-TFBGA 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
IDT71V416VL12BE | The IDTVLBE is a highly reliable memory IC suitable for a wide range of applications requiring low power consumption, high speed, and compact desig | Renesas Electronics Corporation | 3~7 Days | 3,369 | ||
CY7C1021CV33-12BAI | Robust and reliable SRAM device for demanding embedded systems | Cypress Semiconductor Corp | 3~7 Days | 5,150 | ||
CY7C1041CV33-10BAXA | High-speed SRAM module ideal for cache and buffer function | Infineon Technologies | 3~7 Days | 3,588 | ||
CY7C1041CV33-12BAXET | A reliable and efficient parallel memory solution, ideal for systems requiring high-speed data processing and manipulatio | Infineon Technologies | 3~7 Days | 2,263 | ||
CY7C67200-48BAXIT | High-speed interface controller for USB and non-USB applicatio | Infineon Technologies | 3~7 Days | 5,627 | ||
CY62136VNLL-70BAXAT | Advanced memory solution offering reliable data storage and retrieval for demanding systems and applications | Infineon Technologies | 3~7 Days | 6,516 | ||
AT49LV161-70CI | Offers excellent reliability and endurance with a long lifespan of up to erase cycle | Microchip Technology | 3~7 Days | 5,003 | ||
M29DW323DT70ZE6E | Featuring a parallel interface and 70ns access time, the M29DW323DT70ZE6E offers efficient data transfer capabilities | Micron Technology Inc. | OBSOLETE | 3~7 Days | 5,377 | |
W29GL032CT7A | Compact and reliable flash memory for storage applications | Winbond Electronics | 3~7 Days | 5,523 | ||
SST38VF6401-90-5I-B3KE-NCJ | Designed for reliable performance in harsh environments, this 64Mbit flash memory chip offers fast programming and erasing capabilities | Microchip Technology | 3~7 Days | 5,134 | ||
M29W800FB70ZA3SF TR | Advanced data retention and endurance capabilities in a small package footprint | Micron Technology Inc. | 3~7 Days | 2,544 | ||
M29W400FT5AZA6F TR | Reliable data storage for robust manufacturing processes | Micron Technology Inc. | 3~7 Days | 5,795 | ||
CY7C1041CV33-10BAJXE | High-performance RAM for fast data transfer and processing | Infineon Technologies | 3~7 Days | 7,415 | ||
R1LV1616RBG-7SR#B0 | Standard SRAM module with fast access and reliable data retention | Renesas | 3~7 Days | 3,540 | ||
MX29LV160DBXGI-70G | Advanced flash memory module with enhanced reliability and security features | Macronix International | 3~7 Days | 5,484 | ||
IDT71V416S12BEI | This asynchronous SRAM chip offers reliable and fast data access, making it an excellent choice for system-on-module designs | Renesas Electronics Corporation | 3~7 Days | 2,955 | ||
CY7C1021V33L-15BACT | Compact and powerful memory chip for embedded systems: Kx bits, ns cycle tim | Cypress Semiconductor Corp | 3~7 Days | 2,655 | ||
CY62147CV18LL-70BAI | High-density SRAM chip with advanced memory features and reliability | Cypress Semiconductor Corp | 3~7 Days | 3,199 | ||
CY62137CVSL-70BAI | High-capacity memory for industrial applications | Cypress Semiconductor Corp | 3~7 Days | 2,052 | ||
IS66WVE2M16TCLL-70BLI-TR | Compact -ball BGA package with small footprint of m for space-constrained designs | Issi | 3~7 Days | 4,616 | ||
IS66WVE4M16EALL-70BLI | The IS66WVE4M16EALL-70BLI boasts 4Mx16 capacity as a Cellular RAM Pseudo SRAM, supporting voltages from 1 | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 7,145 | |
IS61WV102416DBLL-10BLI | Low power consumption and high reliability guarantee optimal system performance | Issi | 3~7 Days | 5,298 | ||
IS66WVE4M16EBLL-55BLI | With a high-speed performance and a wide memory capacity, this memory chip is suitable for a variety of electronic applications | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 8,828 | |
IS66WVE1M16BLL-70BLI | Ultra-low latency and power efficiency enable smooth operation in resource-constrained environments | Issi | 3~7 Days | 5,220 | ||
IS66WV51216BLL-55BLI | The IS66WV51216BLL-55BLI product is a PSRAM Async Single Port boasting an 8M-bit capacity | ISSI, Integrated Silicon Solution Inc | OBSOLETE | 3~7 Days | 5,342 | |
IS66WVE4M16BLL-70BLI-TR | Reliable, efficient storage solution for enterprise-class servers | Issi | 3~7 Days | 2,449 | ||
IS66WVE1M16EBLL-55BLI | Advanced memory module offering Mb of pseudo SRAM for reliable data retentio | Issi | 3~7 Days | 4,876 | ||
IS66WVE2M16ECLL-70BLI | Elevate your computing capabilities with this robust and scalable ROHS-compliant SRAM module | Issi | 3~7 Days | 7,986 | ||
IS66WV51216EBLL-55BLI | High-speed 8Mb Pseudo SRAM with asynchronous operation and 512Kx16 configuration, offering fast access times of 55ns | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 9,983 | |
IS66WV1M16EBLL-55BLI | The SRAM chip has a fast access time of 55 nanoseconds, making it suitable for applications that require quick read and write operations | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 7,827 | |
IS66WVE2M16TCLL-70BLI | Advanced asynchronous architecture for seamless page-based memory managemen | Issi | 3~7 Days | 6,188 | ||
IS66WVE2M16BLL-70BLI-TR | Compact -pin FBGA package ensures efficient board layout and minimizes space requirements while maintaining reliability and durabilit | Issi | 3~7 Days | 6,453 | ||
IS66WVE2M16ECLL-70BLI-TR | Ultra-low-power consumption design ensures efficient usage in battery-powered devices | Issi | 3~7 Days | 4,530 | ||
IS66WV1M16DBLL-70BLI-TR | High-capacity memory solution for async application | Issi, Integrated Silicon Solution Inc | 3~7 Days | 2,276 | ||
CY62177EV30LL-55BAXI | 16 gigabyte DDR3L memory module with a voltage rating of 1.35 volts, designed for optimal performance | Infineon Technologies | ACTIVE | 3~7 Days | 7,383 | |
CY62177EV30LL-55BAXIT | With a fast access time of 55ns, this CY62177EV30LL-55BAXIT chip ensures rapid data retrieval and processing | Infineon Technologies | ACTIVE | 3~7 Days | 5,523 | |
M29DW323DB70ZE6E | NOR Flash Parallel 3V/3.3V 32M-bit 4M x 8/2M x 16 70ns 48-Pin TFBGA Tray | Micron Technology Inc. | OBSOLETE | 3~7 Days | 5,726 | |
CBTV24DD12ETY | Ideal for applications requiring precise control and management of data streams | NXP USA Inc. | OBSOLETE | 3~7 Days | 6,114 | |
M68AW128ML70ZB6 | High Performance 2Mbit SRAM Memory Chip with 70ns Response Time, 48-TFBGA Form Factor | Stmicroelectronics | 3~7 Days | 4,527 | ||
IS66WVE4M16ECLL-70BLI-TR | PSRAM Async Single Port 64M-bit | Issi | 3~7 Days | 7,195 |
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